Fluxless die bonding of high power laser bars using the AuSn-metallurgy

Weiss, S.; Bader, V.; Azdasht, G.; Kasulke, P.; Zakel, E.; Reichl, H.

doi:10.1109/ectc.1997.606259

Cited by 14 publications

(4 citation statements)

References 21 publications

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“…Eutectic Au-Sn solder (80Au20Sn) undergoes a eutectic reaction of L→ζ+δ at 278℃ as can be seen in Au-Sn binary phase diagram ( Figure 1) [17]. The ζ-phase which has a Mg-type hexagonal close packed structure has been found to extend from 9.1 at.% Sn at 521 ℃ to 17.6 at.% at 280℃.…”

Section: Results and Discussion 31 The Microstructure Of Eutectic Aumentioning

confidence: 90%

The microstructure of eutectic Au-Sn and In-Sn solders on Au/Ti and Au/Ni metallizations during laser solder bonding process for optical fiber alignment

Yan

Wang

Zhang

2006

Conference on High Density Microsystem Design and Packaging and Component Failure Analysis, 2006. HDP'06.

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In this work, two eutectic solders: 80Au20Sn and 52In48Sn were chosen for fiber bonding through laser soldering, and Scanning Electronic Microscope (SEM) equipped with Energy Dispersive X-ray Detector (EDX) was used to investigate the microstructures of at four interfaces between two solders and two metallizations: Au-Sn/(Au/Ti), Au-Sn/(Au/Ni), In-Sn/ (Au/Ti), In-Sn/(Au/Ni). Results show that as for the Au-Sn solder joint a large amount of ζ-phase was formed at the Au-Sn/(Au/Ti) interface with its morphology closely related with laser input energy; while at the Au-Sn/(Au/Ni) interface scallop-like (Au,Ni)Sn appeared with a low input energy and irregular-shaped (Au,Ni) 3 Sn 2 emerged with a high input energy. As for the In-Sn solder, the IMCs at the In-Sn/ (Au/Ti) interface transformed from a Au(In,Sn) 2 layer to isolated AuIn 2 cubes with the increase of input energy while at the In-Sn/(Au/Ni) interface a thin layer of Au(In,Sn) 2 was formed. As the connecting layer, Ti did not react in the soldering process.

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Section: Results and Discussion 31 The Microstructure Of Eutectic Aumentioning

confidence: 90%

The microstructure of eutectic Au-Sn and In-Sn solders on Au/Ti and Au/Ni metallizations during laser solder bonding process for optical fiber alignment

Yan

Wang

Zhang

2006

Conference on High Density Microsystem Design and Packaging and Component Failure Analysis, 2006. HDP'06.

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“…We can design the structure more reasonable, or we can try a totally different way. Now we are working on the AuSn solder used in the solid-state laser encapsulation, which emerges much advantage compared to In-based jointing [14]~ [15]. Besides, the coupling system could be improved too to promote the output efficiency.…”

Section: Discussionmentioning

confidence: 99%

Diode pumped Tm:YAP lasers of different doping concentrations

Chen

Cheng

et al. 2008

SPIE Proceedings

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The experimental investigation on the Tm:YAP lasers with different thulium doped concentrations and specialized crystal dimensions are concluded. The Tm:YAP samples were pumped by a laser diode array (LDA), with the centre wavelength of 790 nm, and adopted in the end-pumped configuration. A maximum 5 W CW output of 5% Tm:YAP laser was reported. Especially, we got a maximum 20 mW output power of 15% Tm:YAP with incident 18.93 W pump power, which was the first demonstration of laser emission for Tm:YAP crystals with the doping concentration higher than 5 at.%. The influences of doping concentration and crystal dimension, the characteristics of absorption and emission spectrum and polarization were discussed. The optimization of laser structure was also analyzed.

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“…We accomplished fluxless attachment, avoiding In as the solder, through employing the widely used gold-tin (AuSn) eutectic solder system (11). Because the eutectic composition of the AuSn alloy is 80% Au͞20% Sn, this material system has the advantage of low oxidation rate and thus permits fluxless soldering, as well as long-term storage without the need to process the solder in any way before reflow.…”

Section: Ex-chip Thermal Management and Materials Selection For Performentioning

confidence: 99%

Improved performance of quantum cascade lasers through a scalable, manufacturable epitaxial-side-down mounting process

Tsekoun

Pushkarsky

et al. 2006

Proc. Natl. Acad. Sci. U.S.A.

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We report substantially improved performance of high-power quantum cascade lasers (QCLs) by using epitaxial-side-down mounting that provides superior heat dissipation properties. We used aluminum nitride as the heatsink material and gold-tin eutectic solder. We have obtained continuous wave power output of 450 mW at 20°C from mid-IR QCLs. The improved thermal management achieved with epitaxial-side-down mounting combined with a highly manufacturable and scalable assembly process should permit incorporation of mid-IR QCLs in reliable instrumentation.continuous wave operation ͉ room temperature operation ͉ high-power lasers ͉ mid-IR semiconductor lasers

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Fluxless die bonding of high power laser bars using the AuSn-metallurgy

Cited by 14 publications

References 21 publications

The microstructure of eutectic Au-Sn and In-Sn solders on Au/Ti and Au/Ni metallizations during laser solder bonding process for optical fiber alignment

The microstructure of eutectic Au-Sn and In-Sn solders on Au/Ti and Au/Ni metallizations during laser solder bonding process for optical fiber alignment

Diode pumped Tm:YAP lasers of different doping concentrations

Improved performance of quantum cascade lasers through a scalable, manufacturable epitaxial-side-down mounting process

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