Flux Pinning in Superconductors
DOI: 10.1007/978-3-540-44515-9_6
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Flux Pinning Mechanisms

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Cited by 5 publications
(2 citation statements)
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“…It is known that thermally activated flux creep is very prominent in HTS at high temperatures2021. According to the flux creep model19, , where ρ 0 is the normal state resistance, k is the Boltzmann constant and U 0 is the pinning potential.…”
Section: Resultsmentioning
confidence: 99%
“…It is known that thermally activated flux creep is very prominent in HTS at high temperatures2021. According to the flux creep model19, , where ρ 0 is the normal state resistance, k is the Boltzmann constant and U 0 is the pinning potential.…”
Section: Resultsmentioning
confidence: 99%
“…Compared to other methods attempted, SiC doping is considered as the convenient and effective way to enhance the J c -B properties of superconducting MgB 2 despite of a slight reduction in T c [1]. However, while the grain boundaries are widely claimed to be the dominant pinning centers [2], the flux pinning mechanism has not yet completely clear. Yamada et al [3] explained that SiC changes the a-axis lattice constant and C substitutes for B. Matsumoto et al [4] explained that SiC-doped samples contain a significant density of various nanoscale precipitates as additional pinning centers.…”
Section: Introductionmentioning
confidence: 99%