Flux growth of Yb3+-doped RE2O3 (RE = Y,Lu) single crystals at half their melting point temperature

Veber, Philippe; Velázquez, M.; Jubera, Véronique; Péchev, Stanislav; Viraphong, Oudomsack

doi:10.1039/c1ce00015b

Cited by 26 publications

(27 citation statements)

References 36 publications

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“…Four dominant elements that can make easily solid solutions with BaZrO 3 were observed through GDMS and SIMS analysis: Ca, Ti, Sr and Hf, whereas other foreign elements contents are drastically decreased compared to their initial content in the raw material. This highlights that optical floating zone method is a suitable technique for removing foreign impurities from oxide crystals contrary to oxide crystals classically grown with a highly polluting environment, such as refractory ceramics and metallic crucibles, inducing a higher impurities contents with the same or a higher raw material purity [68][69][70]. Optical measurements performed on BaZrO 3 While it is demonstrated that BaZrO 3 solubility is poor in BaB 2 O 4 flux, this self-flux growth approach makes possible to crystallize this highly refractory material at low temperatures.…”

Section: Resultsmentioning

confidence: 99%

Single crystal growth of BaZrO₃ from the melt at 2700 °C using optical floating zone technique and growth prospects from BaB₂O₄ flux at 1350 °C

et al. 2019

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We report the growth of BaZrO 3 single crystals by the optical floating zone technique and the investigation on its flux growth using BaB 2 O 4 as a solvent. 6-mm long colorless and transparent single crystals were obtained with a mirror furnace without the need for post-treatment annealing.Its properties are determined and compared with those of two commercial crystals grown by the tri-arc Czochralski method. The chemical composition was investigated using glow discharge mass spectrometry (GDMS) and secondary ion mass spectrometry (SIMS), which indicate minor impurities of Sr, Hf, Ca and Ti, with maximal concentrations for Sr and Hf in the range of 0.3-0.5 % at. The optical band gap determined by UV-visible spectroscopy is found to be ~4.8 eV and Page 1 of 25 CrystEngComm 2indicates the high quality of the BaZrO 3 crystals grown by the optical floating zone technique.Raman spectroscopy at ambient conditions and at low temperatures down to 4.2 K reveals a relatively sharp second-order spectrum and does not reveal any structural phase transition.

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Section: Resultsmentioning

confidence: 99%

Single crystal growth of BaZrO₃ from the melt at 2700 °C using optical floating zone technique and growth prospects from BaB₂O₄ flux at 1350 °C

et al. 2019

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“…Moreover, it is difficult to maintain stable thermal gradients needed for successful Czochralski-growth at these temperatures [34]. Therefore, the growth from a suitable flux, which reduces the melting temperature has been intensely investigated in the past years [35], [36]. However, this method often involves the risk of impurities from the flux material to be incorporated into the crystal.…”

Section: B Growth Of Sesquioxidesmentioning

confidence: 99%

Rare-Earth-Doped Sesquioxides for Diode-Pumped High-Power Lasers in the 1-, 2-, and 3-μm Spectral Range

Kränkel

2015

IEEE J. Select. Topics Quantum Electron.

204

104

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Fabrication, characterization, and laser performance of an Yb:Lu 2 O 3 planar waveguide laser are reported. Pulsed laser deposition was employed to grow an 8 µm-thick Yb-doped lutetia waveguide on a YAG substrate. X-ray diffraction was used to determine the crystallinity, and spectroscopic characterization showed the absorption and emission cross-sections were indistinguishable from those reported for bulk material. When end-pumped by a diode-laser bar an output power of 7.4 W was achieved, limited by the available pump power, at a wavelength of 1033 nm and a slope efficiency of 38% with respect to the absorbed pump power.

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“…[1][2][3] The obvious challenge to their growth in bulk single crystalline shape imposed by their high melting point is rendered more difficult by series of structural phase transitions occurring upon cooling from the melting point. For instance, Eu 2 O 3 exhibits no less than four phase transitions and Gd 2 O 3 three of them between room and melting temperatures.…”

Section: Introductionmentioning

confidence: 99%

Flux growth at 1230 °C of cubic Tb₂O₃single crystals and characterization of their optical and magnetic properties

et al. 2015

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In this work, we present the first crystal growth of cubic Tb 2 O 3 single crystals by a controlled atmosphere flux method which uses a heavy metal free solvent working at less than half the melting temperature of this sesquioxide. Cubic millimeter-sized crystals extracted from as-grown boules are phase (powder XRD) and chemically (GDMS) pure and exhibit a Verdet constant in the visible and near-infrared spectral ranges, which is at least three times higher than that of a commercial Tb 3 Ga 5 O 12 (TGG) crystal. The 1.36 mm thick crystals display a transmission coefficient higher than 77% over the 525 nm-1.38 μm spectral range. The absorption spectrum, magnetic susceptibility and specific heat measurements on the single crystals confirm the absence of detectable Tb 4+ cations and other impurities.

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Flux growth of Yb3+-doped RE2O3 (RE = Y,Lu) single crystals at half their melting point temperature

Cited by 26 publications

References 36 publications

Single crystal growth of BaZrO₃ from the melt at 2700 °C using optical floating zone technique and growth prospects from BaB₂O₄ flux at 1350 °C

Single crystal growth of BaZrO₃ from the melt at 2700 °C using optical floating zone technique and growth prospects from BaB₂O₄ flux at 1350 °C

Rare-Earth-Doped Sesquioxides for Diode-Pumped High-Power Lasers in the 1-, 2-, and 3-μm Spectral Range

Flux growth at 1230 °C of cubic Tb₂O₃single crystals and characterization of their optical and magnetic properties

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Flux growth of Yb3+-doped RE2O3 (RE = Y,Lu) single crystals at half their melting point temperature

Cited by 26 publications

References 36 publications

Single crystal growth of BaZrO3 from the melt at 2700 °C using optical floating zone technique and growth prospects from BaB2O4 flux at 1350 °C

Single crystal growth of BaZrO3 from the melt at 2700 °C using optical floating zone technique and growth prospects from BaB2O4 flux at 1350 °C

Rare-Earth-Doped Sesquioxides for Diode-Pumped High-Power Lasers in the 1-, 2-, and 3-μm Spectral Range

Flux growth at 1230 °C of cubic Tb2O3single crystals and characterization of their optical and magnetic properties

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Product

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Single crystal growth of BaZrO₃ from the melt at 2700 °C using optical floating zone technique and growth prospects from BaB₂O₄ flux at 1350 °C

Single crystal growth of BaZrO₃ from the melt at 2700 °C using optical floating zone technique and growth prospects from BaB₂O₄ flux at 1350 °C

Flux growth at 1230 °C of cubic Tb₂O₃single crystals and characterization of their optical and magnetic properties