Flux and energy analysis of species in hollow cathode magnetron ionized physical vapor deposition of copper

Luo, Wei; Ko, Eunsuk; Dulkin, A.; Park, K. J.; Fields, Shannon; Leeser, K.; Li, Meng; Ruzic, D. N.

doi:10.1063/1.3504371

Cited by 16 publications

(8 citation statements)

References 25 publications

(33 reference statements)

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“…was determined from the total mass deposition rate R t and the mass deposition rate of neutral metal atoms R n , as discussed by Wu et al [34]. The deposition rates were recorded by manually recording the film thickness at a chosen time on a readout unit connected to the QCM.…”

Section: Magnet Dcms Hipims Hipims Hipims Fixed Voltagementioning

confidence: 99%

The Effect of Magnetic Field Strength and Geometry on the Deposition Rate and Ionized Flux Fraction in the HiPIMS Discharge

Hajihoseini

Čada

Hubička

et al. 2019

Plasma

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We explored the effect of magnetic field strength | B | and geometry (degree of balancing) on the deposition rate and ionized flux fraction F flux in dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) when depositing titanium. The HiPIMS discharge was run in two different operating modes. The first one we refer to as “fixed voltage mode” where the cathode voltage was kept fixed at 625 V while the pulse repetition frequency was varied to achieve the desired time average power (300 W). The second mode we refer to as “fixed peak current mode” and was carried out by adjusting the cathode voltage to maintain a fixed peak discharge current and by varying the frequency to achieve the same average power. Our results show that the dcMS deposition rate was weakly sensitive to variations in the magnetic field while the deposition rate during HiPIMS operated in fixed voltage mode changed from 30% to 90% of the dcMS deposition rate as | B | decreased. In contrast, when operating the HiPIMS discharge in fixed peak current mode, the deposition rate increased only slightly with decreasing | B | . In fixed voltage mode, for weaker | B | , the higher was the deposition rate, the lower was the F flux . In the fixed peak current mode, both deposition rate and F flux increased with decreasing | B | . Deposition rate uniformity measurements illustrated that the dcMS deposition uniformity was rather insensitive to changes in | B | while both HiPIMS operating modes were highly sensitive. The HiPIMS deposition rate uniformity could be 10% lower or up to 10% higher than the dcMS deposition rate uniformity depending on | B | and in particular the magnetic field topology. We related the measured quantities, the deposition rate and ionized flux fraction, to the ionization probability α t and the back attraction probability of the sputtered species β t . We showed that the fraction of the ions of the sputtered material that escape back attraction increased by 30% when | B | was reduced during operation in fixed peak current mode while the ionization probability of the sputtered species increased with increasing | B | , due to increased discharge current, when operating in fixed voltage mode.

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Section: Magnet Dcms Hipims Hipims Hipims Fixed Voltagementioning

confidence: 99%

The Effect of Magnetic Field Strength and Geometry on the Deposition Rate and Ionized Flux Fraction in the HiPIMS Discharge

Hajihoseini

Čada

Hubička

et al. 2019

Plasma

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“…In the context of plasma materials processing, plasma sources using magnetic fields include electron cyclotron resonance (ECR) discharges, 1,2 magnetically enhanced reactive ion etching (MERIE) systems, 3 helicon discharges, 4 and magnetrons. 5 Computational investigations of these systems have been conducted to provide an improved understanding of the flow of power through these partially ionized magnetized plasmas. 6,7 Although these plasmas have been developed for different materials processing applications-etching, deposition, implantation-the fundamental motivation behind using magnetic fields is controlling the spatial and energy distributions of electrons, ions, and neutrals.…”

Section: Introductionmentioning

confidence: 99%

Electron energy distributions in a magnetized inductively coupled plasma

et al. 2014

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International audienceOptimizing and controlling electron energy distributions (EEDs) is a continuing goal in plasma materials processing as EEDs determine the rate coefficients for electron impact processes. There are many strategies to customize EEDs in low pressure inductively coupled plasmas (ICPs), for example, pulsing and choice of frequency, to produce the desired plasma properties. Recent experiments have shown that EEDs in low pressure ICPs can be manipulated through the use of static magnetic fields of sufficient magnitudes to magnetize the electrons and confine them to the electromagnetic skin depth. The EED is then a function of the local magnetic field as opposed to having non-local properties in the absence of the magnetic field. In this paper, EEDs in a magnetized inductively coupled plasma (mICP) sustained in Ar are discussed with results from a two-dimensional plasma hydrodynamics model. Results are compared with experimental measurements. We found that the character of the EED transitions from non-local to local with application of the static magnetic field. The reduction in cross-field mobility increases local electron heating in the skin depth and decreases the transport of these hot electrons to larger radii. The tail of the EED is therefore enhanced in the skin depth and depressed at large radii. Plasmas densities are non-monotonic with increasing pressure with the external magnetic field due to transitions between local and non-local kinetics

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“…As shown in Fig. 14 A significant change has been observed in the flux composition between the baseline and optimized processes as measured by the QCM/GEA. The ion densities, which were normalized to the max value of the optimized process, increased by almost an order of magnitude ( Fig.…”

Section: Resultsmentioning

confidence: 81%

Improving the quality of barrier/seed interface by optimizing physical vapor deposition of Cu Film in hollow cathode magnetron

Dulkin

Luo

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inFlux and energy analysis of species in hollow cathode magnetron ionized physical vapor deposition of copper Rev. Sci. Instrum. 81, 123502 (2010); 10.1063/1.3504371In situ plasma diagnostics study of a commercial high-power hollow cathode magnetron deposition toolThe quality of physical vapor deposition (PVD) grown barrier/seed interface in Cu interconnect metallization was significantly improved by enhancing Cu nucleation on the Ta barrier surface. This was accomplished through filtering of nonenergetic species from the deposition flux, increasing the fraction of Cu ions, improving metal ion flux uniformity, and minimizing gas ion bombardment of the growing film. The self-sputtering ability of Cu was combined with a magnetically confined high-density plasma in the Novellus hollow cathode magnetron (HCM V R ) PVD source. Spatial profiles of plasma density and temperature, as well as ion flux, metal ion fraction, and ion energy, were measured by planar Langmuir probes, quartz crystal microbalances, and gridded energy analyzers, all located at the wafer level. Multiple criteria, such as seed step coverage and roughness, the seed layer's resistance to agglomeration, and its stability in the plating bath, have been used to evaluate interface quality. As a result, a new and improved Cu PVD process which demonstrates superior stability during subsequent process steps and ensures successful electrofill performance with a more than 50 % reduction in minimal requirement of field thickness as well as sidewall thickness has been developed.

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Flux and energy analysis of species in hollow cathode magnetron ionized physical vapor deposition of copper

Cited by 16 publications

References 25 publications

The Effect of Magnetic Field Strength and Geometry on the Deposition Rate and Ionized Flux Fraction in the HiPIMS Discharge

The Effect of Magnetic Field Strength and Geometry on the Deposition Rate and Ionized Flux Fraction in the HiPIMS Discharge

Electron energy distributions in a magnetized inductively coupled plasma

Improving the quality of barrier/seed interface by optimizing physical vapor deposition of Cu Film in hollow cathode magnetron

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