“…[13][14][15]35] Secondly,ahydrophobic 2D perovskite layer is formed in situ on the 3D perovskite layer by successively depositing 2-(2-Fluorophenyl)ethylamine iodide after the antisolvent-treatment to passivate the defects on the surface.A sar esult, the novel DP strategy prolongs carrier lifetime through defect passivation and, hence,lifts the V OC from 1.10 Vt o1 .18 V, corresponding to a V OC deficit of 0.39 V. In the complete devices,w ea chieved ac hampion stabilized PCE as high as 23.80 %. It is found that besides the excellent thermal and moisture resistant properties [9,14,18,33,36,37] provided by the DP strategy,t he effective passivation of site-vacancy-type defects (e.g., iodine vacancy) successfully suppressed the generation of O 2 À species.E specially,t his is the first time to observe the decrease of destructive O 2 À species by forming a2 Dp erovskite layer. Therefore,the DP strategy-based PSCs also showed remarkable long-term stability,r etaining over 85 %o ft he initial efficiency after heating on ahot plate at 100 8 8Cfor 30 hunder relative humidity (RH) of 70 %a nd over 97 %o ft he initial PCE after 71 days under a3 0% RH environment conditions without encapsulation.…”