Fluorine-implanted indium-gallium-zinc oxide (IGZO) chemiresistor sensor for high-response NO2 detection

Cu-MOF-Derived C-Doped CuO/Cu2O Hollow Nano-Octahedrons for Room-Temperature NO2 Sensing at the ppb Level

“…With the increase of fossil combustion, industrial waste gas, and vehicle exhaust emissions, nitrogen dioxide (NO 2 ) has emerged as a source of pollution, and the development of excellent NO 2 sensors plays a key role in monitoring its leakage. 1,2 At present, the methods commonly used to detect NO 2 include gas chromatography, liquid chromatography, electrochemical sensing, optical acoustic sensors, etc. However, the above sensors have some problems such as a large volume, slow response, high power consumption, and expensive equipment.…”

“…With the increase of fossil combustion, industrial waste gas, and vehicle exhaust emissions, nitrogen dioxide (NO 2 ) has emerged as a source of pollution, and the development of excellent NO 2 sensors plays a key role in monitoring its leakage. , At present, the methods commonly used to detect NO 2 include gas chromatography, liquid chromatography, electrochemical sensing, optical acoustic sensors, etc. However, the above sensors have some problems such as a large volume, slow response, high power consumption, and expensive equipment. , Metal oxide sensors have attracted the attention of researchers because of their advantages such as small size, low power consumption, and low price. − Compared with n-type semiconductor sensors such as zinc oxide (ZnO), tin oxide (SnO 2 ), tungsten trioxide (WO 3 ), etc., p-type semiconductors are less susceptible to high temperatures and humidity, having better surface reaction and catalytic properties. , p-type semiconductors are expected to be excellent gas sensing materials for detecting NO 2 leakage.…”

Defective Cr2CTx-based sensors with high sensitivity for NO2 detection at room temperature

“…1,2 Thus, the medical sciences, industrial control, and environmental monitoring sectors have all paid close attention to developing room temperature NO 2 sensor technologies. 3,4 Conventional NO 2 sensors face several challenges, notably insufficient sensitivity and stability at ambient temperature. 5 Specifically, most of the gas sensor materials currently used are metal oxide semiconductors, which are prone to degradation or oxidation in high temperature and high humidity environments, affecting their long-term stability; in addition, the interlayer interactions of metal oxide semiconductors are usually strong, resulting in a fixed interlayer spacing, thus affecting their sensing performance, and their low specific surface area also limits their active surface area during gas adsorption; finally, their surface chemical properties are relatively stable, making it difficult to further functionalize and modify their surfaces, thereby increasing the difficulty of improving their sensing performance.…”

Highly Efficient NO2 Sensors Based on Al-ZnOHF under UV Assistance

“…Ion doping is a promising approach in gas-sensing performance improvement. On the one hand, doping ions with different quantities of charges can effectively adjust the carrier concentration and energy band structure of semiconductors [23,24]. On the other hand, due to the difference in diameters between doping ions and original ions, ion doping can create lots of lattice imperfections.…”