Fluorine as a shallow acceptor in ZnSe

Sim, Eundeok; Joh, Y.S.; Min, Sung-Wook; Lee, C.D.; Chang, Suk‐Kyu

doi:10.1016/s0022-0248(96)01124-4

Cited by 1 publication

(2 citation statements)

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“…The 10 K PL spectra of sample A (black dots) and sample B (open dots) are presented in figure 2. Significant features in both spectra are the emission lines at about 2.805 eV which are due to the recombination of free excitons (FX) in strained ZnSe on GaAs [20]. The PL spectrum of the fluorine-doped sample A shows an additional emission line at 2.800 eV.…”

Section: Resultsmentioning

confidence: 99%

“…In this paper, we report on our investigations of the electrical and optical properties of fluorine impurities in ZnSe (ZnSe:F). Our studies are an important prerequisite for the application of fluorine donors in ZnSe in quantum information technology, since earlier studies of these impurities revealed debatable results [17][18][19][20] and no clear experimental evidence for F-donors has been reported. One important issue of this study is to measure the optical properties of excitons bound to fluorine donors at extremely low (and delta) doping levels.…”

Section: Introductionmentioning

confidence: 98%

See 1 more Smart Citation

Investigation of excitons bound to fluorine donors in ZnSe

Pawlis

Sanaka

Götzinger

et al. 2006

Semicond. Sci. Technol.

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The electrical and optical properties of fluorine impurities in ZnSe have been studied. Bulk and delta-doped ZnSe:F layers were grown by molecular beam epitaxy. Electrical measurements reveal evidence that a majority of fluorine impurities act as shallow donors. In delta-doped samples, we find strong photoluminescence due to the radiative recombination of fluorine donor bound excitons. We measured a fluorescence lifetime of less than 250 ps and determined the inhomogeneous line width to be below 2 meV at liquid helium temperature.

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Section: Resultsmentioning

confidence: 99%