Fluorine and carbon fluoride interaction with a diamond surface: Quantum-chemical modeling

Lvova, N.A.; Ananina, O.Yu.; Ryazanova, A. I.

doi:10.1016/j.commatsci.2016.07.014

Cited by 11 publications

(3 citation statements)

References 35 publications

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“…The fluorocarbon deposition was also reported on the outer and inner surface of carbon nanotube in CF 4 plasmas [ 30 ]. The F radicals are easily chemisorbed on carbon surface with a low activation energy of 0.13 eV, but it was reported that it is difficult to remove the carbons due to the high activation energy of 0.56–2.4 eV for removal reactions [ 31 ]. The etch rate of a-C:H was measured with bias power, as shown in Figure 3 b.…”

Section: Resultsmentioning

confidence: 99%

Ion-Enhanced Etching Characteristics of sp2-Rich Hydrogenated Amorphous Carbons in CF4 Plasmas and O2 Plasmas

Kim

Han

et al. 2021

Materials

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The sp2-rich hydrogenated amorphous carbon (a-C:H) is widely adopted as hard masks in semiconductor-device fabrication processes. The ion-enhanced etch characteristics of sp2-rich a-C:H films on ion density and ion energy were investigated in CF4 plasmas and O2 plasmas in this work. The etch rate of sp2-rich a-C:H films in O2 plasmas increased linearly with ion density when no bias power was applied, while the fluorocarbon deposition was observed in CF4 plasmas instead of etching without bias power. The etch rate was found to be dependent on the half-order curve of ion energy in both CF4 plasmas and O2 plasmas when bias power was applied. An ion-enhanced etching model was suggested to fit the etch rates of a-C:H in CF4 plasmas and O2 plasmas. Then, the etch yield and the threshold energy for etching were determined based on this model from experimental etch rates in CF4 plasma and O2 plasma. The etch yield of 3.45 was observed in CF4 plasmas, while 12.3 was obtained in O2 plasmas, owing to the high reactivity of O radicals with carbon atoms. The threshold energy of 12 eV for a-C:H etching was obtained in O2 plasmas, while the high threshold energy of 156 eV was observed in CF4 plasmas. This high threshold energy is attributed to the formation of a fluorocarbon layer that protects the a-C:H films from ion-enhanced etching.

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Section: Resultsmentioning

confidence: 99%

Ion-Enhanced Etching Characteristics of sp2-Rich Hydrogenated Amorphous Carbons in CF4 Plasmas and O2 Plasmas

Kim

Han

et al. 2021

Materials

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“…Earlier, the authors obtained a similar result for the interaction of fluorine with the diamond surface. 35 …”

Section: Carbon Monoxide Desorptionmentioning

confidence: 99%

“…Calculations within the semiempirical method are described comprehensively in the papers of Lvova et al, 35,39 Lvova and Ananina 40 and Ponomarev et al 41 For systems with an even and an odd number of electrons, calculations were performed for the singlet and doublet states, respectively.…”

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confidence: 99%

Hydrogen and Oxygen Atoms Interaction with the Point Defects on the C(100):H Diamond Surface

PonomarevOleg

LvovaNatalia

RyazanovaAnna

2017

Surface Innovations

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This paper presents the results of quantum-chemical calculations of the adsorption and desorption activation energy bonding energy and the results of the interactions between particles (hydrogen (H), oxygen (O), methylene (CH 2 ) and carbon monoxide (CO)) with point defects on a reconstructed hydrogenated diamond surface C(100)-(2×1): a monovacancy, a divacancy and an adatom. The paper describes the most probable single acts of etching and restoration of an ordered surface. It is shown that the most likely single etching acts among the considered processes are the formation of carbon monoxide molecules from adatoms and oxygen from the gas phase. The most effective process of restoring an ordered surface is the attachment of methylene molecules to divacancy defects. It is assumed that some 'empty' dimer rows are formed as a result of surface vacancy defect etching. The results can be used to analyze the physical and chemical processes on the diamond surface during reactive ion etching using hydrogen-/oxygen-based plasma. NotationE act adsorption activation energy E b bond energy (heat of adsorption) E cl energy of the diamond cluster E des desorption activation energy E p energy of an isolated particle E saddle saddle point of the reaction coordinate E sys energy of the diamond cluster with adsorbed particle DE change in the total energy of the surface + particle system

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Customizing defect location in MWCNTs/Fe3O4 composites by direct fluorination for enhancing microwave absorption performance

Zhang

Qin

Chen

et al. 2023

Applied Surface Science

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Fluorine and carbon fluoride interaction with a diamond surface: Quantum-chemical modeling

Cited by 11 publications

References 35 publications

Ion-Enhanced Etching Characteristics of sp2-Rich Hydrogenated Amorphous Carbons in CF4 Plasmas and O2 Plasmas

Ion-Enhanced Etching Characteristics of sp2-Rich Hydrogenated Amorphous Carbons in CF4 Plasmas and O2 Plasmas

Hydrogen and Oxygen Atoms Interaction with the Point Defects on the C(100):H Diamond Surface

Customizing defect location in MWCNTs/Fe3O4 composites by direct fluorination for enhancing microwave absorption performance

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