Fluorination of carbon blacks: an X-ray photoelectron spectroscopy study

Shirasaki, Toru; Moguet, F.; Lozano, L.; Tressaud, A.; Nanse, G.; Papirer, E.

doi:10.1016/s0008-6223(99)00066-4

Cited by 45 publications

(33 citation statements)

References 8 publications

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“…Details of the fitting procedure can be found in previous papers [16,17]. There are two major peaks in the C1s envelope: the peak at lower BE, located at 284.3 eV, can be assigned to the component C1s (1) which corresponds to non-functionalized sp 2 and sp 3 C atoms that are not affected by fluorination; the peak at higher BE, C1s (6), which is located at 288.6 eV is the most important component of C-F bonds and can be assigned to carbon atoms present at the surface and border of the graphitic domains.…”

Section: Carbon Blacksmentioning

confidence: 99%

Modification of surface properties of carbon-based and polymeric materials through fluorination routes: From fundamental research to industrial applications

Tressaud

Durand²,

Labrugère³

et al. 2007

Journal of Fluorine Chemistry

174

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The outstanding characteristics of fluorine gas, e.g., extreme reactivity and oxidizing power, and the utmost electronegativity of F À ion, lead to very strong bonds between fluorine and most of the other elements of the periodical table. Treatments involving F 2 , fluorinated gases and rf plasmaenhanced fluorination (PEF) constitute exceptional tools for modifying the surface properties of materials. Many advantages of these techniques can be indeed outlined, when compared to more conventional methods: low-temperature reactions (even at room temperature), chemical modifications limited to surface only without changing the bulk properties, possible non-equilibrium reactions. Depending on the type of starting materials and employed techniques, the improved properties may concern wettability, adhesion, chemical stability, barrier properties, biocompatibility, grafting, mechanical behavior. Several examples of surface fluorination will be given on various types of carbon-based materials, elastomers and polymers. #

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Section: Carbon Blacksmentioning

confidence: 99%

Modification of surface properties of carbon-based and polymeric materials through fluorination routes: From fundamental research to industrial applications

Tressaud

Durand²,

Labrugère³

et al. 2007

Journal of Fluorine Chemistry

174

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“…The reactivity of various types of carbon blacks with F 2 -gas and other fluorinated reagents has been recently investigated [8,15]. N115 carbon black has been chosen for the present study because it exhibits intermediate surface area of 145 m 2 /g.…”

Section: Furnace Carbon Black Pefmentioning

confidence: 99%

Surface modification of several carbon-based materials: comparison between CF4 rf plasma and direct F2-gas fluorination routes

Tressaud

Durand

Labrugère

2004

Journal of Fluorine Chemistry

104

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“…The C u CF x peaks at the BE of 287.6 eV are attributed to the nonfunctionalized sp 2 C or sp 3 C in the ␤ position to two or three F atoms ͑not directly bound to F atoms͒, respectively. 22,23 The peaks corresponding to CF related to the covalent bonding of C with F in the CF group are assigned to BEs shifted from the C u C peak by 5.2 eV. 22,23 The C 1s and F 1s spectra in Fig.…”

Section: Resultsmentioning

confidence: 99%

Infinite etch selectivity and line edge roughness variation during etching of silicon oxynitride with an extreme ultraviolet resist pattern in dual-frequency CH2F2∕H2∕Ar capacitively coupled plasmas

Kwon

Kim

Lee

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The process window for infinitely high etch selectivity of silicon oxynitride (SiON) layers to extreme ultraviolet (EUV) resist and the variation in line edge roughness (LER) of etched EUV resist were investigated in a CH2F2∕H2∕Ar dual-frequency superimposed capacitively coupled plasma under various process parameters including the gas flow ratio and low-frequency source power (PLF). The CH2F2∕H2 gas flow ratio was found to play a critical role in determining the process window for infinite selectivity of the SiON/EUV resist due to the change in the degree of polymerization. The preferential chemical reaction of hydrogen and carbon species in the hydrofluorocarbon (CHxFy) layer with nitrogen on the SiON surface led to the formation of HCN etch by-products, resulting in a thinner steady-state CHxFy layer. During continuous SiON etching, the thinner steady-state CHxFy layer was due to enhanced SiF4 formation, while the CHxFy layer was deposited on the EUV resist surface. In addition, the critical dimension and LER tended to increase with increasing Q(CH2F2) flow ratio.

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Fluorination of carbon blacks: an X-ray photoelectron spectroscopy study

Cited by 45 publications

References 8 publications

Modification of surface properties of carbon-based and polymeric materials through fluorination routes: From fundamental research to industrial applications

Modification of surface properties of carbon-based and polymeric materials through fluorination routes: From fundamental research to industrial applications

Surface modification of several carbon-based materials: comparison between CF4 rf plasma and direct F2-gas fluorination routes

Infinite etch selectivity and line edge roughness variation during etching of silicon oxynitride with an extreme ultraviolet resist pattern in dual-frequency CH2F2∕H2∕Ar capacitively coupled plasmas

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