Fluorination-control of electronic and magnetic properties in GeC-hybrid

Role of planar buckling on the electronic, thermal, and optical properties of Germagraphene nanosheets

“…The band gap has thus been enhanced to 3.49 eV displaying photocatalytic characteristics for water splitting [19]. Likewise, the mechanical, electronic, and magnetic properties of a GeC monolayer can be modified through hydrogen or halogen passivation [20,21] Doping a GeC monolayer could be considering as another technique to modify the band gap. For instance, F and C dopant atoms in a GeC monolayer disrupt the planar structure and a surface-functionalized GeC monolayer with low-buckling results [22].…”

Effect of H/F Adsorption on the Electronic Structure of TH-Ge0.5Si0.5C2-zz

“…So it can change the properties of twodimensional materials more effectively. In fact, surface functionalization by adsorption of H/F atoms has been applied to change the band gaps of graphene, g-SiC, and g-GeC [2][3][4][5][6] . Among them, fluorinated graphene (FG) has a wider energy gap and other excellent properties and has been prepared [7] .…”

Complex magnetism of the two-dimensional antiferromagnetic Ge2F: from a Néel spin-texture to a potential antiferromagnetic skyrmion

“…Half fluorination is an exothermic adsorption that generates stable 2D hexagonal structures. 44 In half-fluorinated graphene, C 2 F, where F-atoms form strong covalent bonds with carbon, a threshold of the antiferromagnetic–ferromagnetic instability with strong Dzyaloshinskii–Moriya interaction was predicted 46 with the potential presence of ferromagnetic skyrmions. The latter work challenged the ab initio results obtained by Rudenko et al , 45 which revealed finite AFM interactions on the triangular lattice of magnetic moments, leading to the instability of the collinear magnetic ordering due to frustration and the stabilization of a 120° Néel state.…”