pathway of the emerging perovskite solar cells (PSCs). [1][2][3][4] The defects in the bulk and at the surface of the perovskite lightharvesting material play vital roles in both the photoelectric conversion efficiency (PCE) and long-term stability. [5][6][7][8] These defects not only scatter charge carriers, giving rise to undesirable nonradiative recombination losses, [6,7] but also act as the predominant reactive sites for water and oxygen. Even worse, defects may serve as migration channels for ionic species that lead to device degradation. [7,[9][10][11] Thus, the presence of defects severely threatens the performance and stability of PSCs. Therefore, there have been numerous reports of efforts focused on lowering the defect density and deactivating defects. [4,[12][13][14][15][16][17][18][19][20][21][22] For effective/targeted defect passivation to further promote the performance of perovskite photovoltaic devices, it is imperative to carefully investigate the defect energy levels, defect types, and defect capturing capability. [6,23,24] Yang et al. characterized the defect energy distribution using admittance spectroscopy. [25] From those results combined with theoretical calculation, they attributed the defect with an activation energy of ≈0.16 eV above the valance band to iodine interstitials (I i ) in methylammonium lead Nonradiative losses caused by defects are the main obstacles to further advancing the efficiency and stability of perovskite solar cells (PSCs). There is focused research to boost the device performance by reducing the number of defects and deactivating defects; however, little attention is paid to the defect-capture capacity. Here, upon systematically examining the defect-capture capacity, highly polarized fluorinated species are designed to modulate the dielectric properties of the perovskite material to minimize its defectcapture radius. On the one hand, fluorinated polar species strengthen the defect dielectric-screening effect via enhancing the dielectric constant of the perovskite film, thus reducing the defect-capture radius. On the other, the fluorinated iodized salt replenishes the I-vacancy defects at the surface, hence lowering the defect density. Consequently, the power-conversion efficiency of an all-inorganic CsPbI 3 PSC is increased to as high as 20.5% with an opencircuit voltage of 1.2 V and a fill factor of 82.87%, all of which are among the highest in their respective categories. Furthermore, the fluorinated species modification also produces a hydrophobic umbrella yielding significantly improved humidity tolerance, and hence long-term stability. The present strategy provides a general approach to effectually regulate the defect-capture radius, thus enhancing the optoelectronic performance.