2003
DOI: 10.2494/photopolymer.16.27
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Fluorinated Chemically Amplified Dissolution Inhibitors for 157 nm Nanolithography

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Cited by 8 publications
(2 citation statements)
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“…Chemically amplified 248 nm resists such as those derived from the original t-butyloxycarbonyloxy-styrene system, [2][3][4] while still the workhorse of photolithography, do not have the transparency required to be used with the ArF laser. [8][9][10] The diffraction limit has historically forced a decrease in exposure wavelengths to reduce the critical dimension of new lithographic processes. [8][9][10] The diffraction limit has historically forced a decrease in exposure wavelengths to reduce the critical dimension of new lithographic processes.…”
Section: Introductionmentioning
confidence: 99%
“…Chemically amplified 248 nm resists such as those derived from the original t-butyloxycarbonyloxy-styrene system, [2][3][4] while still the workhorse of photolithography, do not have the transparency required to be used with the ArF laser. [8][9][10] The diffraction limit has historically forced a decrease in exposure wavelengths to reduce the critical dimension of new lithographic processes. [8][9][10] The diffraction limit has historically forced a decrease in exposure wavelengths to reduce the critical dimension of new lithographic processes.…”
Section: Introductionmentioning
confidence: 99%
“…The chemical amplification resist system is one new approach. [42][43][44][45][46] In this system, acid derived from a photo-acid generator promotes removal of the protecting groups, such as tbutyl ester, acetal, trimethylsilyl, and tetrahydropyranyl groups to achieve higher resolution. [47][48][49][50] Recently, many new chemical The n D 's of the calixarene derivative films about 0.1 mm thick, spincoated on a silicon wafer, before and after photo-irradiation were determined by ellipsometry at 632.8 nm.…”
Section: Arf Resist Materials Based On Cyclodex-trinmentioning
confidence: 99%