Fluoride Bulk Crystals Growth

Baldochi, S.L.; Morato, S.P.

doi:10.1016/b978-0-12-803581-8.03668-7

Cited by 2 publications

(1 citation statement)

References 16 publications

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“…At present, large-size fluoride single crystals are grown from the melt using the Czochralski and Bridgman (Stockbarger) methods [31][32][33][34], and less often using the Kyropoulos and vertical gradient freeze (VGF) methods. The micro-pulling-down (µ-PD) method for obtaining single-crystal fibers has also been presented [35,36].…”

Section: Growth Equipment Designmentioning

confidence: 99%

Growth Peculiarities and Properties of KR3F10 (R = Y, Tb) Single Crystals

et al. 2021

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Cubic KR3F10 (R = Y, Tb) single crystals have been successfully grown using the Bridgman technique. Growth of crystals of this type is complicated due to the hygroscopicity of potassium fluoride and melt overheating. The solution to the problem of oxygen-incorporated impurities has been demonstrated through the utilization of potassium hydrofluoride as a precursor. In this study, the crystal quality, structure features, and optical, thermal and electrophysical properties of KR3F10 were examined. Data on the temperature dependences of conductivity properties of KTb3F10 crystals were obtained for the first time. These crystals indicated thermal conductivity equal to 1.54 ± 0.05 Wm−1K−1 at room temperature caused by strong phonon scattering in the Tb-based crystal lattice. Ionic conductivities of KY3F10 and KTb3F10 single crystals were 4.9 × 10−8 and 1.2 × 10−10 S/cm at 500 K, respectively, and the observed difference was determined by the activation enthalpy of F− ion migration. Comparison of the physical properties of the grown KR3F10 crystals with the closest crystalline analog from the family of Na0.5−xR0.5+xF2+2x (R = Tb, Y) cubic solid solutions is reported.

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Section: Growth Equipment Designmentioning

confidence: 99%

Growth Peculiarities and Properties of KR3F10 (R = Y, Tb) Single Crystals

et al. 2021

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Diagonal scan measurement of Cr:LiSAF 20 ps ablation threshold

2008

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We report the measurement of the 20 ps ablation threshold of pure and Cr(3+) doped LiSAF samples using a simple method that employs a single scan of the sample across a focused laser beam waist. During the scan, a profile is etched in the sample surface, and the measurement of the maximum transversal size of the profile and the pulse peak power determine the ablation threshold, without any further knowledge of the beam geometry. Also, it was possible to measure the depth of the ablation profile, to calculate its effective volume, and to identify that the maximum material removal rate per pulse does not occur at the beam waist, which is not intuitively expected.

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Fluoride Bulk Crystals Growth

Cited by 2 publications

References 16 publications

Growth Peculiarities and Properties of KR3F10 (R = Y, Tb) Single Crystals

Growth Peculiarities and Properties of KR3F10 (R = Y, Tb) Single Crystals

Diagonal scan measurement of Cr:LiSAF 20 ps ablation threshold

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