Fluorescence Dynamics of Er3+ Ions in MBE-Grown GaN-Thin Films

Pellé, F.; Auzel, F.; Zavada, J. M.; Hömmerich, U.; Lee, D. S.; Steckl, A. J.

doi:10.1007/978-94-010-0031-4_8

Cited by 2 publications

(3 citation statements)

References 25 publications

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“…On the other hand, the values of the diffusion coefficient are similar to those measured for rare earth ions in insulator (10 −11 to 10 −9 cm 2 s −1 ) [11]. The donor-acceptor transfer constant (α DA ) is in good agreement with the reported value of α DA found in literature [9].…”

Section: Resultssupporting

confidence: 85%

“…This distance indicates that the energy transfer can occur among ions located within this obtained distance. The attained values for the critical transfer distance in these samples are larger than the value reported in the case of Er 3+ -doped GaN thin films and LaF 3 (0.4 nm) [9,10]. On the other hand, the values of the diffusion coefficient are similar to those measured for rare earth ions in insulator (10 −11 to 10 −9 cm 2 s −1 ) [11].…”

Section: Resultssupporting

confidence: 39%

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Fluorescence dynamics and energy migration in Er3+-doped SRSO structure

Choueiry¹,

Jurdyc²,

Jacquier³

et al. 2008

Materials Science and Engineering: B

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Section: Resultssupporting

confidence: 85%

Section: Resultssupporting

confidence: 39%

Fluorescence dynamics and energy migration in Er3+-doped SRSO structure

Choueiry¹,

Jurdyc²,

Jacquier³

et al. 2008

Materials Science and Engineering: B

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“…The calculations are described in detail elsewhere [13]. All the microscopic parameters characterizing the Er 3+ -Er 3+ interaction in different GaN samples were determined.…”

Section: Visible Emission Of the C1 Centermentioning

confidence: 99%

New spectroscopic data of erbium ions in GaN thin films

Pellé¹,

Auzel²,

Zavada³

et al. 2003

Materials Science and Engineering: B

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Optical properties of erbium ions in MBE-grown GaN-thin films are reported. Three types of sites were identified using site selective laser excitation. The main center is ascribed to the Er 3+ ions substituted in the Ga sub-lattice while the two other centers are assigned to Er-related defects. The lifetimes of the 4 S 3/2 and 4 I 13/2 multiplets of the main center are strongly quenched with increasing Er concentration. The complex decay profile of the visible fluorescence and its concentration dependence were modeled and interpreted using the diffusion-limited model.The dynamics of the infrared emission at 1.54 m from the 4 I 13/2 multiplet after excitation in the visible range is discussed. The crystal field strength of Er 3+ in GaN was deduced from the overall crystal field splitting of the ground multiplet. Comparison of the results with those obtained in inorganic materials indicates that the rare earth is well embedded in the semiconductor host and not in a impurity oxide phase.

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Fluorescence Dynamics of Er3+ Ions in MBE-Grown GaN-Thin Films

Cited by 2 publications

References 25 publications

Fluorescence dynamics and energy migration in Er3+-doped SRSO structure

Fluorescence dynamics and energy migration in Er3+-doped SRSO structure

New spectroscopic data of erbium ions in GaN thin films

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