Fluid flow and solute segregation in EFG crystal growth process

Voids engulfment in shaped sapphire crystals

“…The influence of the ambient temperature distribution [10,12] and of the pulling rate [12,13,[15][16][17][18] on the void distribution in the rod-shaped sapphire crystals have been studied by numerical simulation of the heat, momentum and mass transfer, using the STHAMAS 3D software [10,12] and the FIDAP software [13,[15][16][17][18]. The influence of the melt flow on the impurity distribution in various growth methods has been studied by many investigators, both experimentally and theoretically.…”

“…The model for fluid flow and mass transfer, the boundary conditions used for the two shaper geometries (a central capillary channel shaper-CCC and an annular capillary channel shaper-ACC) are described in Refs. [13,[15][16][17][18]. The influence of the die design on the fluid flow and on the impurity distribution is studied for various meniscus heights, Marangoni numbers and segregation coefficients.…”

“…In this paper, we present a review of our, more than 20 years long research on void engulfment in shaped sapphire crystals [6,8,[10][11][12][13][14][15][16][17][18]. Because the gas bubbles are mobile with respect to the crystallization interface, the study of gas engulfment in crystals involves a number of physical processes.…”

“…The experimental results on the void distribution in crystals, published in Refs. [6,8,18] and some unpublished observations, are compared with the numerical simulation of the heat, fluid flow and mass transfer [10][11][12][13][15][16][17][18]. The purpose of the numerical simulation of the physical processes in the meniscus are to obtain additional information about the melt flow and the impurity (gases) distribution in order to explain the void distribution observed in shaped sapphire crystals obtained by the EFG method.…”

Model based computation of the impurity distribution in the wall of a tube grown from the melt by the edge-defined film-fed growth technique

“…Influence of the shaper geometry and various growth conditions on the fluid flow and on the impurities distribution in rod growth by EFG method was reported in [13]. In [14] a numerical analysis concerning the dependence of the Al distribution on the pulling rate and on the radius of the capillary channel for thin Si rod growth was undertaken.…”