Fluence Effects in C₆₀ Cluster Bombardment of Silicon

Abstract

In this theoretical investigation, we combine the results of molecular dynamics (MD) simulations with a simple statistical sputtering model (SSM) in order to understand the factors limiting the optimum depth resolution achievable in sputter depth profiling experiments. The advantage of the SSM model is that it can be used to extrapolate the MD simulations toward the regime of high projectile fluence. First, a recently developed scheme [

Erosion of Ag surface by continuous irradiation with slow, large Ar clusters

“…Aoki et al utilized a Si sample covered with artificially placed geometrical blocks [7] or a sample with predefined, sine wave, surface features [9] to examine the effects that the surface roughness on a smoothing process by Ar clusters of hundreds to thousands of atoms. Only very recently, new studies investigating evolution of surface roughness during continuous cluster bombardment have been published [10][11][12][13]. These studies have shown, for instance, that the final roughness of bombarded surface is correlated with the vertical dimensions of a crater formed by a single impact [12].…”

“…Only very recently, new studies investigating evolution of surface roughness during continuous cluster bombardment have been published [10][11][12][13]. These studies have shown, for instance, that the final roughness of bombarded surface is correlated with the vertical dimensions of a crater formed by a single impact [12].…”

Cluster SIMS of Organic Materials: Theoretical Insights

“…The results obtained with silicon surfaces indicate similar trends of surface corrugation under ion beam bombardment as well as massive lateral and vertical relocation of atoms in the sample. 75 The topography of a C 60 bombarded Si surface is shown in Figure 2 substrate to form a mixed SiC phase. These results were used to develop a new statistical model of sputtering (SSM).…”

“…134,135 Recently, MD simulations helped to develop a statistical sputtering model that explains the erosion of Si surfaces under continuous C 60 bombardment (recall Section 2.2.6). 75 The Penn State group also used MD simulations to propose an analytical model describing the penetration of fullerene clusters in molecular solids. The simulations are consistent with an analytical model that considers the projectile as a single entity submitted to friction while it penetrates the organic medium.…”

How material properties affect depth profiles – insight from computer modeling

“…[7] This model is a revised form of the statistical sputtering model previously developed by Krantzman and Wucher. [8] Although the input MD simulations still take months of computer time, the SS-SSM allows us to calculate depth profiles in a couple of hours of computing time.…”