Fluctuation theory of donor‐acceptor pair luminescence in compensated semiconductors

Abstract

PACS 78.20. Bh, We propose a self-consistent quantitative fluctuation theory of donor-acceptor pair luminescence in compensated semiconductors at constant excitation. The theory succeeds in explanation of main peculiarities of luminescence, including lineshape and position. It also allows to extract such an important material parameter as compensation with high dgreee of precision.

Two components of donor-acceptor recombination in compensated semiconductors: Analytical model of spectra in the presence of electrostatic fluctuations

“…In earlier studies DA recombination was analytically described using a model of screened electrostatic fluctuations which is acceptable in the case of heavily doped compensated semiconductors. In this approach one uses some phenomenological parameters like a screening radius, which are not so easy to determine [10][11][12]. Another method to describe DA recombination is a numerical simulation based on an algorithm of electrostatic energy minimization.…”