“…vortex magnetization or magnetic curling at the edge of the films) if the films are patterned into nanoscale devices and lead to memory cell instability or switching field fluctuation [6,7]. However, those problems could be solved using magnetic thin films with perpendicular magnetic anisotropy (PMA), for example, amorphous rare-earth transition-metal (RE-TM) compounds [8][9][10], (Co/Pd) n , (Co/Pt) n , and (Co/Ni) n multilayers [11][12][13]. For the RE-TM films, coercivity field (H C ) is usually too large to be used in the high sensitive sensors.…”