2021
DOI: 10.1016/j.apsusc.2021.151074
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Flower-like In2O3/ZnO heterostructure with accelerated multi-orientation electron transport mechanism for superior triethylamine detection

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Cited by 36 publications
(22 citation statements)
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“…In addition, the energy spectrum of Zn is shown in Figure e. The peaks at 1044.77 and 1021.78 eV correspond to Zn 2p 1/2 and Zn 2p 3/2 , respectively, indicating the existence of the Zn 2+ oxidation state in BiOBr/ZnO composites . From the energy spectrum of O 1s in Figure f, the characteristic peaks at 532.07 and 530.37 eV binding energies can be obtained by Gaussian fitting, corresponding to the lattice oxygen (Zn–O) and oxygen vacancy (V O ), respectively.…”
Section: Results and Discussionmentioning
confidence: 99%
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“…In addition, the energy spectrum of Zn is shown in Figure e. The peaks at 1044.77 and 1021.78 eV correspond to Zn 2p 1/2 and Zn 2p 3/2 , respectively, indicating the existence of the Zn 2+ oxidation state in BiOBr/ZnO composites . From the energy spectrum of O 1s in Figure f, the characteristic peaks at 532.07 and 530.37 eV binding energies can be obtained by Gaussian fitting, corresponding to the lattice oxygen (Zn–O) and oxygen vacancy (V O ), respectively.…”
Section: Results and Discussionmentioning
confidence: 99%
“…The gas sensing mechanism of semiconductors mainly depends on a series of chemical and physical reactions of gas molecules on nanostructure surfaces. The excellent TEA sensing performances of the BiOBr/ZnO sensor can be explained by the space charge depletion layer theory. , As shown in Figure a, when the BiOBr/ZnO sensor is exposed to air, oxygen molecules will capture electrons and form oxygen anions (O – , O 2– , and O 2 – ). Among them, the dominant oxygen species at T opt.…”
Section: Results and Discussionmentioning
confidence: 99%
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“…The work function of ZnO (5.2 eV) is lower than that of CsPbBr 3 (5.79 eV). , After the n–n heterojunction is formed, electrons transfer from ZnO to CsPbBr 3 . As portrayed in Figure d, an internal electric field forms at the interface of CsPbBr 3 -2MPA and ZnO NPs, and the energy bands of both materials are bent until a new equilibrium is reached. , Therefore, the surface of CsPbBr 3 is the electron-rich region. The CsPbBr 3 -2MPA/ZnO heterostructures provide more abundant electrons and active adsorption sites for oxygen species, which is conducive to the formation of chemisorbed oxygen anions on the surface of heterogeneous semiconductor CsPbBr 3 -2MPA/ZnO, thus significantly improving the gas-sensitive characteristics.…”
Section: Resultsmentioning
confidence: 99%