2005
DOI: 10.1615/hightempmatproc.v9.i3.20
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Flow and Temperature Dependence of Particle Formation in Ar-Silane Rf Capacitively Coupled Plasmas

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Cited by 3 publications
(7 citation statements)
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“…Characteristic decrease times are 24 ± 3 ms and 30 ± 3 ms for gas temperatures of 40 • C and 100 • C, respectively, having a ratio of 1.25 ± 0.19. This is in good agreement with observations in SiH 4 discharges [3,14], where the rapid decrease in n e is explained by the formation of negative ions. Here, negative ions might be formed by dissociative electron attachment to CH 4 with CH − 2 and H − as main reaction products [21].…”
Section: Electron Densitysupporting
confidence: 92%
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“…Characteristic decrease times are 24 ± 3 ms and 30 ± 3 ms for gas temperatures of 40 • C and 100 • C, respectively, having a ratio of 1.25 ± 0.19. This is in good agreement with observations in SiH 4 discharges [3,14], where the rapid decrease in n e is explained by the formation of negative ions. Here, negative ions might be formed by dissociative electron attachment to CH 4 with CH − 2 and H − as main reaction products [21].…”
Section: Electron Densitysupporting
confidence: 92%
“…A Smart PIM radio frequency plasma impedance monitor (PIM) of scientific systems-Smart PIM TM has been used to characterize the discharge electrically in a non-intrusive way. In the past researchers already proved that electrical characterization of the discharge gives useful information regarding particle nucleation and growth processes in chemical reactive plasmas [3,14,18]. The used system consists of a sensor head, a data acquisition and control unit and, finally, a PC to store and display measured values.…”
Section: Methodsmentioning
confidence: 99%
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“…It was experimentally observed that nucleation in low pressure argon-silane discharges significantly delays when T g is increased. 3,4,[11][12][13] In order to understand this delay, several explanations have been proposed. Fridman et al…”
mentioning
confidence: 99%