Floating zone growth of high-quality SrTiO3 single crystals

Nabokin, P.I.; Souptel, D.; Balbashov, A. M.

doi:10.1016/s0022-0248(02)02391-6

Cited by 48 publications

(42 citation statements)

References 13 publications

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“…The detailed scenario of all steps of the climbing of the dislocations in this electrical complicated surrounding has been described by Hirel et al [105]. e.g., [10,42,[99][100][101][102][103][104]). All processes which can lead to new arrangements of dislocations in the matrix are connected with two basic possibilities to move the dislocations in the matrix.…”

Section: Arrangement Of Dislocationsmentioning

confidence: 99%

“…This very sensitive method for the analysis of the extended defects and strained regions has often been used for SrTiO3 crystals, especially for studies of the mosaicity and the density of dislocations which are generated during growth of the crystals with different methods [99][100][101][102][103][104]142,143]. It should be noted that the X-ray topography studies for SrTiO3 crystals have revealed that these crystals cannot be (in the regular phase) classified as a monocrystals, because the low-and high-angle boundary are typical for the mosaic-like structure, which in turn means that such crystals can be defined as single crystals.…”

Section: X-ray Topographymentioning

confidence: 99%

“…In fact, the ductility of the SrTiO 3 crystal at room temperature is just about 10% [68,107]. Using the device which is illustrated in Figure 67 it is possible to deform (plastically) a SrTiO 3 crystal in a controlled manner [68,104,132]. Depending on the radius of the prism and external forces F 1 and F 2 , the density of the steps and their height close to the contact lines (bands) can be manipulated (see Figure 67).…”

Section: Mechanical Properties Versus Dislocationsmentioning

confidence: 99%

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Influence of Dislocations in Transition Metal Oxides on Selected Physical and Chemical Properties

et al. 2018

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Studies on dislocations in prototypic binary and ternary oxides (here TiO 2 and SrTiO 3 ) using modern TEM and scanning probe microscopy (SPM) techniques, combined with classical etch pits methods, are reviewed. Our review focuses on the important role of dislocations in the insulator-to-metal transition and for redox processes, which can be preferentially induced along dislocations using chemical and electrical gradients. It is surprising that, independently of the growth techniques, the density of dislocations in the surface layers of both prototypical oxides is high (10 9 /cm 2 for epipolished surfaces and up to 10 12 /cm 2 for the rough surface). The TEM and locally-conducting atomic force microscopy (LCAFM) measurements show that the dislocations create a network with the character of a hierarchical tree. The distribution of the dislocations in the plane of the surface is, in principle, inhomogeneous, namely a strong tendency for the bundling and creation of arrays or bands in the crystallographic <100> and <110> directions can be observed. The analysis of the core of dislocations using scanning transmission electron microscopy (STEM) techniques (such as EDX with atomic resolution, electron-energy loss spectroscopy (EELS)) shows unequivocally that the core of dislocations possesses a different crystallographic structure, electronic structure and chemical composition relative to the matrix. Because the Burgers vector of dislocations is per se invariant, the network of dislocations (with additional d 1 electrons) causes an electrical short-circuit of the matrix. This behavior is confirmed by LCAFM measurements for the stoichiometric crystals, moreover a similar dominant role of dislocations in channeling of the current after thermal reduction of the crystals or during resistive switching can be observed. In our opinion, the easy transformation of the chemical composition of the surface layers of both model oxides should be associated with the high concentration of extended defects in this region. Another important insight for the analysis of the physical properties in real oxide crystals (matrix + dislocations) comes from the studies of the nucleation of dislocations via in situ STEM indentation, namely that the dislocations can be simply nucleated under mechanical stimulus and can be easily moved at room temperature.

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Section: Arrangement Of Dislocationsmentioning

confidence: 99%

Section: X-ray Topographymentioning

confidence: 99%

Section: Mechanical Properties Versus Dislocationsmentioning

confidence: 99%

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Influence of Dislocations in Transition Metal Oxides on Selected Physical and Chemical Properties

et al. 2018

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“…The crystal growth conditions change significantly properties of SrTiO 3 crystal [3,4]. Good optical properties [5] of strontium titanate, large electroluminescence and photochromism and discovery of high temperature superconductivity for separate perovskite are some of the reasons for growing attention to SrTiO 3 crystal, also.…”

Section: Introductionmentioning

confidence: 99%

Dielectric, spectral and Raman scattering studies of Nd-doped SrTiO3 single crystal

Popović¹,

Romčević²,

Spasović³

et al. 2006

Journal of Alloys and Compounds

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“…Thus, this paper deals with the SrTiO 3 single crystals grown by Floating Zone Method 22 . The reported data show that the self-doping in SrTiO 3-δ is well described by a first order mechanism with an activation energy of 1.4±0.3 eV to produce oxygen vacancies, which is comparable to the recent data available on literature 23 .…”

Section: Introductionmentioning

confidence: 99%

Kinetics of Vacancy Doping in SrTiO3 Studied by in situ Electrical Resistivity

et al. 2018

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The kinetics of annealing to transform stoichiometric SrTiO 3 insulator into a vacancy-doped semiconductor-superconductor was revisited by in situ electrical resistivity measurements. SrTiO 3 single crystals were grown by Floating Zone Method. Using a homemade apparatus several electrical resistivity as a function of time were measured at different temperatures, which allows one to study the creation of vacancies during annealing under vacuum. The activation energy for the oxygen vacancies formation/charge doping in SrTiO 3 was estimated as 1.4±0.3 eV using solid-state kinetics approach.

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Floating zone growth of high-quality SrTiO3 single crystals

Cited by 48 publications

References 13 publications

Influence of Dislocations in Transition Metal Oxides on Selected Physical and Chemical Properties

Influence of Dislocations in Transition Metal Oxides on Selected Physical and Chemical Properties

Dielectric, spectral and Raman scattering studies of Nd-doped SrTiO3 single crystal

Kinetics of Vacancy Doping in SrTiO3 Studied by in situ Electrical Resistivity

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