Floating millivolt reference for PTAT current generation in Subthreshold MOS LSIs

Ueno, K.; Hirose, Takahisa; Asai, Tetsuya; Amemiya, Yoshihito

doi:10.1109/iscas.2007.378776

Cited by 3 publications

(2 citation statements)

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“…Table 4 summarizes the characteristics of our PD-BGR in comparison with other CMOS differential BGRs in [14]- [20]. Our proposed PD-BGR can generate 25-to 200-mV reference voltages with a 25-mV step.…”

Section: Measurement Resultsmentioning

confidence: 99%

“…Various VRs capable of operating with nano-watt (nW) power, or less, have been investigated [7]- [13]. The reference voltages of these VRs are based on the bandgap voltage of silicon (𝑉 BGR ) [7], [8], threshold voltage (𝑉 TH ) of a MOS-FET [9], [10], and threshold voltage difference (Δ𝑉 TH ) [11]- [14]. However, almost all of them are realized in a singleended configuration, so differential or programmable VRs † The author is with the Division of Electrical, Electronic and Infocommunications Engineering, Graduate School of Engineering, Osaka University, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan.…”

Section: Introductionmentioning

confidence: 99%

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Programmable Differential Bandgap Reference Circuit for Ultra-Low-Power CMOS LSIs

ITOTAGAWA,

ATSUMI,

SEBE

et al. 2024

IEICE Trans. Electron.

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This paper describes a programmable differential bandgap reference (PD-BGR) for ultra-low-power IoT (Internet-of-Things) edge node devices. The PD-BGR consists of a current generator (CG) and differential voltage generator (DVG). The CG is based on a bandgap reference (BGR) and generates an operating current and a voltage, while the DVG generates another voltage from the current. A differential voltage reference can be obtained by taking the voltage difference from the voltages. The PD-BGR can produce a programmable differential output voltage by changing the multipliers of MOSFETs in a differential pair and resistance with digital codes. Simulation results showed that the proposed PD-BGR can generate 25-to 200-mV reference voltages with a 25-mV step within a ±0.7% temperature inaccuracy in a temperature range from -20 to 100 • C. A Monte Carlo simulation showed that the coefficient of the variation in the reference was within 1.1%. Measurement results demonstrated that our prototype chips can generate stable programmable differential output voltages, almost the same results as those of the simulation. The average power consumption was only 88.4 nW, with a voltage error of −4/+3 mV with 5 samples.

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Section: Measurement Resultsmentioning

confidence: 99%