Floating gate technology for high performance 8-level 3-bit NAND flash memory

Kim, Tae‐Kyung; Chang, Sungnam; Choi, Jung Kyu

doi:10.1016/j.sse.2009.03.019

Cited by 12 publications

(6 citation statements)

References 9 publications

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“…Considerable effort has been devoted toward developing a structural approach for solving these issues to realize scaled NAND flash memory. Poly-Si has long been used as a floating gate in NAND flash memory owing to its favorable characteristics [7,8]. To enhance the property of a floating memory cell, we attempted to change the floating cell from Poly-Si to Poly-GaAs and reported our findings in a previous article [9].…”

Section: Introductionmentioning

confidence: 94%

Memory Characteristics of Capacitors with Poly-GaP Floating Gates

Shin

Song

et al. 2020

Appl. Sci. Converg. Technol.

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We fabricated a capacitor with polycrystalline gallium phosphide (Poly-GaP), which has high thermal immunity for better CMOS compactness, as a floating gate. Using a phosphide beam flux, in a molecular beam epitaxy chamber, 0.5 μm of Poly-GaP film was successfully grown on silicon at 250. Its device characteristics were compared with capacitors that instead used Poly-GaAs and Poly-Si. It is revealed that the memory window for the capacitor with the Poly-GaP floating film is comparable to the Poly-GaAs one, and still shows approximately twice the value of the Poly-Si. Based on these results, we conclude that flash memory with a Poly-GaP floating material can provide not only a wider memory window due to significant traps in III-V compounds, but also thermal immunity of the GaP material, which can be applied for 2D scaled flash memory.

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Section: Introductionmentioning

confidence: 94%

Memory Characteristics of Capacitors with Poly-GaP Floating Gates

Shin

Song

et al. 2020

Appl. Sci. Converg. Technol.

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“…Because the level-to-level V TH margin is narrower in the MLC than the single-level cell (SLC), small threshold voltage variation can induce a read error. [16][17][18][19][20][21] In this paper, we investigate the threshold voltage disturbance caused by the programmed adjacent cell in virtual source/drain NAND flash memory devices. By the device simulator, we simulate the VSD NAND flash memory device and observe the threshold voltage disturbance.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory

Kim¹,

Kwon²,

Ji³

et al. 2011

Jpn. J. Appl. Phys.

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In this paper, we investigate the threshold voltage disturbance caused by programmed adjacent cells in virtual source/drain (VSD) NAND flash memory device. The fringing field induced by charge in an adjacent memory node inhibits the inversion of virtual source/drain region. So, it increases the threshold voltage of the read cell. This is a drawback for the multi-level cell (MLC) operation. The device simulation and measurement data of fabricated devices show that the disturbance increases as the cell gate length and VSD length decreases. It can be minimized by the electric field concentration induced by the arch shape structure.

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“…In addition, because of its relatively simple structure, NAND flash technology is driving physical dimension scaling since there are no state-of-the-art 3D capacitors and multi-level metal interconnects as in DRAM and logic devices, respectively [1][2][3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Barrier engineering in metal–aluminum oxide–nitride–oxide–silicon (MANOS) flash memory: Invited

Kang¹

2010

Current Applied Physics

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Floating gate technology for high performance 8-level 3-bit NAND flash memory

Cited by 12 publications

References 9 publications

Memory Characteristics of Capacitors with Poly-GaP Floating Gates

Memory Characteristics of Capacitors with Poly-GaP Floating Gates

Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory

Barrier engineering in metal–aluminum oxide–nitride–oxide–silicon (MANOS) flash memory: Invited

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