Floating gate EEPROM as EOS indicators during wafer-level GMR processing

Granstrom, Eric L.; Cermak, Radek; Tesarek, P.; Tabat, N.

doi:10.1109/eosesd.2000.890121

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)

DOI: 10.1109/eosesd.2000.890121

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Floating gate EEPROM as EOS indicators during wafer-level GMR processing

Eric L. Granstrom

Radek Cermak²,

P. Tesarek³

et al.

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Use of EEPROM-based sensors in investigating physical mechanisms responsible for charging damage

Lukaszek¹

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320)

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Wafer charging damage in IC process equipment is the result of complex interactions between the wafer environment and the wafer. EEPROM-based sensors have been used recently to quantify the UV and charging characteristics of process tools, and to examine the interactions between the wafer environment and the wafer. This paper discusses these topics, relates them to charging damage, and illustrates them with examples from experiments performed in different process tools. [

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Use of EEPROM-based sensors in investigating physical mechanisms responsible for charging damage

Lukaszek¹

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320)

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Floating gate EEPROM as EOS indicators during wafer-level GMR processing

Cited by 1 publication

References 5 publications

Use of EEPROM-based sensors in investigating physical mechanisms responsible for charging damage

Use of EEPROM-based sensors in investigating physical mechanisms responsible for charging damage

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