Flicker noise properties of organic thin-film transistors

Martin, Sandrine; Dodabalapur, Ananth; Bao, Zhenan; Crone, B. K.; Katz, Howard E.; Li, W.; Passner, A.; Rogers, John A.

doi:10.1063/1.372354

Cited by 67 publications

(48 citation statements)

References 18 publications

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“…For organic photodiodes, little is known about flicker noise, differently from inorganic metaloxide-semiconductor field-effect transistors (MOSFETs) 32 and organic thin-film-transistors 31,[33][34][35] , where flicker noise is observed for the drain current. Here, the two dominant flicker noise sources described are trapping-detrapping of carriers at the gate oxide (causing a carrier number fluctuation) and bulk scattering (causing a mobility fluctuation).…”

Section: Resultsmentioning

confidence: 99%

A hybrid CMOS-imager with a solution-processable polymer as photoactive layer

et al. 2012

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The solution-processability of organic photodetectors allows a straightforward combination with other materials, including inorganic ones, without increasing cost and process complexity significantly compared with conventional crystalline semiconductors. Although the optoelectronic performance of these organic devices does not outmatch their inorganic counterparts, there are certain applications exploiting the benefit of the solution-processability. Here we demonstrate that the small pixel fill factor of present complementary metal oxide semiconductor-imagers, decreasing the light sensitivity, can be increased up to 100% by replacing silicon photodiodes with an organic photoactive layer deposited with a simple low-cost spray-coating process. By performing a full optoelectronic characterization on this first solution-processable hybrid complementary metal oxide semiconductor-imager, including the first reported observation of different noise types in organic photodiodes, we demonstrate the suitability of this novel device for imaging. Furthermore, by integrating monolithically different organic materials to the chip, we show the cost-effective portability of the hybrid concept to different wavelength regions.

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Section: Resultsmentioning

confidence: 99%

A hybrid CMOS-imager with a solution-processable polymer as photoactive layer

et al. 2012

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“…4. From their survey we observe that the relative noise is proportional to L Ϫ3 in samples with channel lengths of Lу12 m which point to a channel without series resistance contributions.…”

Section: On Bias and Geometry Dependence As Shown In Literaturementioning

confidence: 99%

1/f noise in pentacene and poly-thienylene vinylene thin film transistors

Vandamme

Feyaerts

Trefán

et al. 2002

Journal of Applied Physics

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We investigate low frequency conductivity noise in the drain-source channel of organic material field-effect transistors by measuring the spectra of current fluctuations for several values of the gate voltage V gs and drain voltage V ds and find that it is 1/f . The samples are biased in the ohmic range of the applied V ds . The relative current 1/f noise is inversely proportional to the charge carrier numbers N generated by illumination or by varying the gate-source voltage. Hooge's empirical relation for the 1/f noise is validated for these organic semiconductors with an ␣Х0.01 for poly-thienylene vinylene and about 100 for pentacene thin film transistors. From geometry dependence of the noise we conclude that series resistance can be ignored for poly-thienylene vinylene field-effect transistors. However, some pentacene samples suffer from a noisy series resistance to the channel resistance. From the 1/f noise dependence on geometry and gate voltage bias we conclude that it can be used as a diagnostic tool for device quality assessment.

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“…Previous reports show that mobility fluctuations generate noise in organic devices, but reports of the noise magnitude and dependence on device parameters such as gate voltage V g and sourcedrain voltage V sd vary significantly [7][8][9][10] .…”

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confidence: 99%

“…Organic thin film transistors (TFT's) typically display flicker (1/f) noise 7,9 in the linear IV regime for low frequencies of roughly 1Hz-10kHz 2,17 . Empirically, we expect the current noise to have the form…”

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confidence: 99%

Percolative effects on noise in pentacene transistors

Conrad

Cullen

Yan

et al. 2007

Applied Physics Letters

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Noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers. Over the entire thickness range, the spectral noise form is 1/f, and the noise parameter varies inversely with gate voltage, confirming that the noise is due to mobility fluctuations, even in the thinnest films. Hooge's parameter varies as an inverse power-law with conductivity for all film thicknesses. The magnitude and transport characteristics of the spectral noise are well explained in terms of percolative effects arising from the grain boundary structure.

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Flicker noise properties of organic thin-film transistors

Cited by 67 publications

References 18 publications

A hybrid CMOS-imager with a solution-processable polymer as photoactive layer

A hybrid CMOS-imager with a solution-processable polymer as photoactive layer

1/f noise in pentacene and poly-thienylene vinylene thin film transistors

Percolative effects on noise in pentacene transistors

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