Flicker (1/f) noise generated by a random walk of electrons in interfaces

Jäntsch, O.

doi:10.1109/t-ed.1987.23051

Cited by 85 publications

(50 citation statements)

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“…The free carrier absorption and internal photoemission in HIWIP detectors lead to carrier number fluctuations, which would result in current fluctuations in the external circuit when a net current flows through the detector. This kind of noise is related to the presence of interface localized states [8]. The interface states N is has been estimated [9] ) reported for MBE grown Be-doped p-type GaAs [10].…”

Section: Negative Capacitancementioning

confidence: 95%

“…It is found that the 1/f noise power density is proportional to I d h with an h value of 2.05 2.10. This type of behavior indicates that the origin of the 1/f noise could be interpreted in terms of a random fluctuation in the occupancy of the interface trap centers which can lead to generation-recombination (G-R) 1/f noise [8]. The free carrier absorption and internal photoemission in HIWIP detectors lead to carrier number fluctuations, which would result in current fluctuations in the external circuit when a net current flows through the detector.…”

Section: Negative Capacitancementioning

confidence: 99%

See 1 more Smart Citation

GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors

Perera

Shen

Liu

et al. 2000

Materials Science and Engineering: B

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Section: Negative Capacitancementioning

confidence: 95%

Section: Negative Capacitancementioning

confidence: 99%

GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors

Perera

Shen

Liu

et al. 2000

Materials Science and Engineering: B

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“…with and (9) In general, for the source biasing condition stated above, the coherence function , so the noise sources at B and C are fully correlated and only is dominant. In the case of modern deep-submicron MOSFETs with very thin gate oxides, it is tempting to state that the same expressions with the following changes are applicable ; ; ; ; ; and .…”

Section: Why Bjtsmentioning

confidence: 99%

Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review

Deen

Pascal

2003

SPIE Proceedings

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For many analog integrated circuit applications, the polysilicon emitter bipolar junction transistor (PE-BJT) is still the preferred choice because of its higher operational frequency and lower noise performance characteristics compared to MOS transistors of similar active areas and at similar biasing currents. In this paper, we begin by motivating the reader with reasons why bipolar transistors are still of great interest for analog integrated circuits. This motivation includes a comparison between BJT and the MOSFET using a simple small-signal equivalent circuit to derive important parameters that can be used to compare these two technologies. An extensive review of the popular theories used to explain low frequency noise results is presented. However, in almost all instances, these theories have not been fully tested. The effects of different processing technologies and conditions on the noise performance of PE-BJTs is reviewed and a summary of some of the key technological steps and device parameters and their effects on noise is discussed. The effects of temperature and emitter geometries scaling is reviewed. It is shown that dispersion of the low frequency noise in ultra-small geometries is a serious issue since the rate of increase of the noise dispersion is faster than the noise itself as the emitter geometry is scaled to smaller values. Finally, some ideas for future research on PE-BJTs, some of which are also applicable to SiGe heteorjunction bipolar transistors and MOSFETs, are presented after the conclusions.Key words: 1/f noise in bipolar transistors, low frequency noise, noise in scaled devices, impact of technology on noise performance, noise comparison, temperature effects, figure-of-merit, polysilicon emitter bipolar junction transistors

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“…Hence, the change in Fano factor cannot be explained by a change in barrier height. Also processes as the modulation of the carrier density and defects at the barrier and fluctuations in the surface generation-recombination current cannot explain the change in Fano factor [189][190][191][192]. All these processes are related to 1/f noise which is usually dominant at f < 100 kHz and therefore not present in our measurements.…”

Section: Resultsmentioning

confidence: 95%

Non-triviality matters

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Flicker (1/f) noise generated by a random walk of electrons in interfaces

Cited by 85 publications

References 85 publications

GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors

GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors

Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review

Non-triviality matters

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