Flexible strategy of epitaxial oxide thin films

A Flexible Hf0.5Zr0.5O2 Nonvolatile Memory with High Polarization Based on Mica Substrate

“…In recent years, the growing need for intelligent medical devices has sparked significant interest in flexible electronic devices because of their high flexibility. , Among various functional materials, ferroelectric materials are considered potential candidates for future memory devices due to their high speed, low power consumption, and nonvolatile characteristics. − Based on the polarization characteristics of ferroelectric materials, a variety of ferroelectric devices have been developed, including ferroelectric memory, ferroelectric field-effect transistors, and ferroelectric tunneling junction devices. − Ferroelectric materials with a high dielectric constant have been utilized in the current mainstream fin field-effect transistor (FinFET) …”

Optimization of a LaNiO3 Bottom Electrode for Flexible Pb(Zr,Ti)O3 Film-Based Ferroelectric Random Access Memory Applications

“…Such free-standing films are transferred onto polymer substrates to endow the film with flexibility [14][15][16]. Of the two methods, the direct growth on flexible substrates has frequently been adopted due to the advantages of its one-step growth capability and large-scale processing [17]. For example, Kingon et al used a copper (Cu) foil substrate for sol-gel-grown Pb(Zr,Ti)O 3 (PZT) films with flexible functionality [18].…”