Flexible Memristor Constructed by 2D Cadmium Phosphorus Trichalcogenide for Artificial Synapse and Logic Operation (Adv. Funct. Mater. 9/2023)

Abstract

Transition‐Metal Phosphorus Trichalcogenide In article number 2211269, Jiahong Wang, Cong Ye, and co‐workers report a flexible memristor fabricated utilizing two‐dimensional cadmium phosphorus trichalcogenide nanosheets; the synaptic plasticity, including paired‐pulse facilitation and spiking timing‐dependent plasticity, are further observed. Owing to the linear conductance modulation capacity, the decimal operation is explored.

Flexible, Transparent, and Wafer‐Scale Artificial Synapse Array Based on TiOx/Ti3C2Tx Film for Neuromorphic Computing

“…Recently, with the vigorous development of intelligent flexible wearable, and transparent electronic devices, low transmittance of traditional memristors no longer meet the requirements for smart home, intelligent health detection, augmented reality, and other wearable devices. [ 12–15 ] Therefore, a flexible memristor array with high transmittance has been put on the agenda. Many kinds of new materials have been developed and used to prepare flexible or transparent memristors, such as hBN, [ 16 ] NiO, [ 17 ] MoS 2 , [ 18 ] perovskite, [ 19 ] and organic polymer.…”

Mechanism for the long afterglow in Eu2O3 and Nd2O3 co-doped SrAl2O4 single crystals

“…7(c), the peak of the TL curve for the SrAl 2 O 4 : 1.0 mol% Eu 2 O 3 crystal moves to a lower temperature when Nd 2 O 3 is present, but this temperature then gradually increases with increasing Nd 3+ . Generally, if the trap depth is shallow (E T < 0.6 eV), the duration of the afterglow is short, but an afterglow cannot be observed if the trap depth is too deep (E T > 2.0 eV), 27 Therefore, a continuous glow at room temperature is best observed when the trap depth in the matrix is ∼0.65 eV, 3,28,29 as described by the empirical relationship [30][31][32]…”

A covalent organic polymer-based transistor with multifunctional memory and synaptic functions

“…In recent years, various devices have been investigated to mimic synapses, including memristors, [5][6][7][8][9][10][11][12][13] field-effect transistors, [14][15][16][17] ferroelectric memories, 18,19 complementary metal-oxide semiconductor (CMOS) devices, 2,20 phase-change memory 21,22 and floating gate memory transistors. [23][24][25] However, significant impediments and challenges still exist.…”