2014
DOI: 10.1002/adma.201306084
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Flexible, Low‐Voltage and High‐Performance Polymer Thin‐Film Transistors and Their Application in Photo/Thermal Detectors

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Cited by 113 publications
(91 citation statements)
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“…[18] In this process, a solution of Al(NO 3 ) 3 ·9H 2 O in ethanol (0.1 mol L −1 ) was spin-coated onto the SiO 2 , and the resulting film was baked Recent years have witnessed remarkable improvement of field effect mobility in organic thin film transistors (OTFTs). A few p-channel OTFTs of small-molecule [1] and polymer semiconductors [2][3][4] were reported to exhibit hole mobility over 10 cm 2 V −1 s −1 and even reaching 50 cm 2 V −1 s −1…”
Section: Doi: 101002/adma201601171mentioning
confidence: 99%
“…[18] In this process, a solution of Al(NO 3 ) 3 ·9H 2 O in ethanol (0.1 mol L −1 ) was spin-coated onto the SiO 2 , and the resulting film was baked Recent years have witnessed remarkable improvement of field effect mobility in organic thin film transistors (OTFTs). A few p-channel OTFTs of small-molecule [1] and polymer semiconductors [2][3][4] were reported to exhibit hole mobility over 10 cm 2 V −1 s −1 and even reaching 50 cm 2 V −1 s −1…”
Section: Doi: 101002/adma201601171mentioning
confidence: 99%
“…OPTs are an attractive category of OFETs, which can be used as photodetectors, light‐induced switches, light‐triggered amplifiers, and image sensors, amongst other applications 15, 16, 17, 18, 19, 20, 21, 22, 23. In most studies on OPTs, it was the organic semiconductor itself, which exhibited photosensitivity.…”
mentioning
confidence: 99%
“…[75c] Recently, our group has fabricated a flexible, low-operating-voltage (≤−3 V) and high-mobility thin-film transistor by using n-octadecyltrichlorosilane(OTS)-modified poly(vinyl alcohol) (PVA). [54] As a high-ε r dielectric layer, PVA film can be prepared by a solution-processing method. After modified by OTS, the root-mean squared (RMS) roughness of PVA films can be reduced to 0.384 nm and the surface energy was decreased, which might lead to the formation of smaller π−π stacking distance and better TFT charge transport.…”
Section: Api Applications For Low-energy-consumption Ofetsmentioning
confidence: 99%