Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires

Dai, Xiaoying; Messanvi, Agnès; Zhang, Hezhi; Durand, Christophe; Eymery, J.; Bougerol, Catherine; Julien, F. H.; Tchernycheva, Maria

doi:10.1021/acs.nanolett.5b02900

Cited by 185 publications

(179 citation statements)

References 61 publications

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“…(30) by Taylor expanding the integrand to second order in (Q + 2eA + 2mâS) and find the Cooperon Hamiltonian in units of Q 2 so = (2mβ) 2 as…”

Section: A Cooperon Hamiltonianmentioning

confidence: 99%

“…In recent years, semiconductor nanowires have gathered growing attention as they offer a large variety of applications such as lasers [1], light-emitting diodes [2], photodetectors [3], solar cells [4], and field-effect transistors [5] among others. They, moreover, constitute an important platform in the search for Majorana bound states [6,7].…”

Section: Introductionmentioning

confidence: 99%

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Weak (anti)localization in tubular semiconductor nanowires with spin-orbit coupling

et al. 2016

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We compute analytically the weak (anti)localization correction to the Drude conductivity for electrons in tubular semiconductor systems of zinc-blende type. We include linear Rashba and Dresselhaus spin-orbit coupling (SOC) and compare wires of standard growth directions 100 , 111 , and 110 . The motion on the quasi-twodimensional surface is considered diffusive in both directions: transversal as well as along the cylinder axis. It is shown that Dresselhaus and Rashba SOC similarly affect the spin relaxation rates. For the 110 growth direction, the long-lived spin states are of helical nature. We detect a crossover from weak localization to weak antilocalization depending on spin-orbit coupling strength as well as dephasing and scattering rate. The theory is fitted to experimental data of an undoped 111 InAs nanowire device which exhibits a top-gate-controlled crossover from positive to negative magnetoconductivity. Thereby, we extract transport parameters where we quantify the distinct types of SOC individually.

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“…(30) by Taylor expanding the integrand to second order in (Q + 2eA + 2mâS) and find the Cooperon Hamiltonian in units of Q 2 so = (2mβ) 2 as…”

Section: A Cooperon Hamiltonianmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Weak (anti)localization in tubular semiconductor nanowires with spin-orbit coupling

et al. 2016

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“…The significant attention is due to the vast scope of technical applications [2][3][4][5][6] as well as the capability to conduct fundamental studies, such as the search for Majorana bound states [7,8]. Another broad field of interest concerns the utilization for spintronic devices, which exploit the spin degree of freedom of the charge carriers.…”

Section: Introductionmentioning

confidence: 99%

Magnetoconductance correction in zinc-blende semiconductor nanowires with spin-orbit coupling

et al. 2017

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We study the effects of spin-orbit coupling on the magnetoconductivity in diffusive cylindrical semiconductor nanowires. Following up on our former study on tubular semiconductor nanowires, we focus in this paper on nanowire systems where no surface accumulation layer is formed but instead the electron wave function extends over the entire cross section. We take into account the Dresselhaus spin-orbit coupling resulting from a zinc-blende lattice and the Rashba spin-orbit coupling, which is controlled by a lateral gate electrode. The spin relaxation rate due to Dresselhaus spin-orbit coupling is found to depend neither on the spin density component nor on the wire growth direction and is unaffected by the radial boundary. In contrast, the Rashba spin relaxation rate is strongly reduced for a wire radius that is smaller than the spin precession length. The derived model is fitted to the data of magnetoconductance measurements of a heavily doped back-gated InAs nanowire and transport parameters are extracted. At last, we compare our results to previous theoretical and experimental studies and discuss the occurring discrepancies.

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“…Recently, oriented one-dimensional (1-D) nanostructures, such as nanowires (NWs) and nanorods, have attracted signicant research interest due to their potential application as building blocks in many opto-electronic devices, such as photovoltaics, [1][2][3][4] light-emitting diodes (LEDs), [5][6][7][8] eld effect transistors (FETs), [9][10][11][12] nanolasers, [13][14][15] and electric generators. 16,17 Moreover, the carrier diffusion coefficient and electron recombination time of the ordered 1D nanostructure were found to be larger than those for polycrystalline lms, which in turn remarkably increased the diffusion length of the minority carrier.…”

Section: Introductionmentioning

confidence: 99%

The synthesis of hybrid nanostructure comprising star-shaped GaN nanowires and Si nanoworms

et al. 2017

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Herein, we proposed a novel hybrid nanostructure comprising unique star-shaped GaN nanowires with Si nanoworms having drifting Au nanoparticles inside. Both nanostructures were simultaneously grown using a MOCVD chamber. Intentional stain was induced while growing the star-shaped GaN nanowires to achieve this new nanostructure. A planned experimental environment was deliberated to facilitate the simultaneous growth of the Si nanoworms along with the star-shaped GaN nanowires. After the growth process, various characterization techniques were applied to study the crystallinity and structural and optical properties of the hybrid structure. The growth mechanisms for both structures were also systematically investigated. It was found that a high concentration of the n-dopant source drives the growth of the star-shaped GaN nanowires by suppressing the lateral growth at the high dopant-concentrated vertices of the conventional hexagonal-shaped GaN nanowires. On the other hand, a surplus amount of the same dopant source assists the Si nanoworms to grow. Si nanoworms follow the base-growth mechanism, in which after a while, the Au nanoparticles start to drift inside the Si nanoworms. Finally, the photocurrent of the hybrid structure was measured and compared with that of the star-shaped GaN nanowires only. It is concluded from the photocurrent measurements that the grown hybrid structure is a better candidate for future optoelectronic devices.

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Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires

Cited by 185 publications

References 61 publications

Weak (anti)localization in tubular semiconductor nanowires with spin-orbit coupling

Weak (anti)localization in tubular semiconductor nanowires with spin-orbit coupling

Magnetoconductance correction in zinc-blende semiconductor nanowires with spin-orbit coupling

The synthesis of hybrid nanostructure comprising star-shaped GaN nanowires and Si nanoworms

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