Flexible Light-Emitting Devices Based on Chirality-Sorted Semiconducting Carbon Nanotube Films

Yu, Deming; Liu, Huaping; Peng, Lian‐Mao; Wang, Sheng

doi:10.1021/am508597c

Cited by 19 publications

(27 citation statements)

References 28 publications

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“…As such, using chirally separated SWCNTs is a promising means of improving device performance since they possess well‐defined emission wavelengths and narrow peaks. Owing to the aforementioned properties, chirality‐sorted SWCNTs has been proposed to be an effective component in transparent and flexible light‐emitting source applications …”

Section: Transistorsmentioning

confidence: 99%

“…The simultaneous injection of electrons and holes into the undoped SWCNT enabled the creation of a p–n junction. Due to the direct bandgap in s‐SWCNTs, charge carriers can easily be recombined as compared to the indirect bandgap semiconductors . In such a device, however, the low EQE (10 −6 to 10 −7 ) and broad spectra could limit their full potential .…”

Section: Transistorsmentioning

confidence: 99%

“…The increased quantum efficiencies of the nanotubes suspended in polymer can be attributed to the small nonresonant background in the absorption spectrum . Yu et al demonstrated highly flexible near‐infrared light‐emitting devices using (8,3) and (8,4) SWCNTs on a PET as transparent substrate. The fabricated devices exhibited well‐defined emission wavelengths, narrow peak widths, high intensity, and more importantly were able to operate after a 500 cycle bending test.…”

Section: Transistorsmentioning

confidence: 99%

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Recent Advances in Applications of Sorted Single‐Walled Carbon Nanotubes

Bati

Batmunkh

et al. 2019

Adv Funct Materials

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Single-walled carbon nanotubes (SWCNTs) exhibit outstanding properties that make them appealing in a wide range of applications. However, their properties are variable depending on the tube helicity (chirality), which has been a challenge for a long time and needs to be effectively controlled. In recent years, tremendous efforts have been made to control the electrical type/chirality of nanotubes through both direct controlled synthesis and postsynthesis separation methods. Driven by these breakthroughs, the applications of separated families of SWCNTs in various fields have emerged as a new topic of research. In this Review, an overview of recent advances in the use of highly purified and well-separated SWCNTs in a comprehensive range of applications is presented including photovoltaics, transistors, batteries, sensors, light emitters, biological/medical fields, and others. Finally, important future directions for the utilization of separated SWCNTs in these fields are provided.

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Section: Transistorsmentioning

confidence: 99%

Section: Transistorsmentioning

confidence: 99%

Section: Transistorsmentioning

confidence: 99%

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Recent Advances in Applications of Sorted Single‐Walled Carbon Nanotubes

Bati

Batmunkh

et al. 2019

Adv Funct Materials

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“…Since their discovery in the early nineties, single wall carbon nanotubes (SWNTs) have attracted great attention due to their potential for nanoscale electronics, sensors, photodetectors, solar cells, LEDs, and, more recently, photonics . Carbon nanotubes are characterized by ballistic transport (at low bias and within hundreds of nm) and single wall carbon nanotube field effect transistors (SWNT‐FETs) can have extremely high I ON / I OFF ratios .…”

Section: Introductionmentioning

confidence: 99%

Polarization‐Sensitive Single‐Wall Carbon Nanotubes All‐in‐One Photodetecting and Emitting Device Working at 1.55 µm

Balestrieri

Keita

Durán-Valdeiglesias

et al. 2017

Adv Funct Materials

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International audienceFunctional and easy-to-integrate nanodevices operating in the telecom wavelength ranges are highly desirable. Indeed, the pursuit for faster, cheaper, and smaller transceivers for datacom applications is fueling the interest in alternative materials to develop the next generation of photonic devices. In this context, single wall carbon nanotubes (SWNTs) have demonstrated outstanding electrical and optical properties that make them an ideal material for the realization of ultracompact optoelectronic devices. Still, the mixture in chirality of as-synthesized SWNTs and the necessity of precise positioning of SWNT-based devices hinder the development of practical devices. Here, the realization of operational devices obtained using liquid solution-based techniques is reported, which allow high-purity sorting and localized deposition of aligned semiconducting SWNTs (s-SWNTs). More specifically, devices are demonstrated by combining a polymer assisted extraction method, which enables a very effective selection of s-SWNTs with a diameter of about 1–1.2 nm, with dielectrophoresis, which localizes the deposition onto silicon wafers in aligned arrays in-between prepat-terned electrodes. Thus, long semiconducting nanotubes directly contact the electrodes and, when asymmetric contacts (i.e., source and drain made of different metals) are used, each device can operate both as photoemitter and as photodetector in the telecom band around 1.55 µm in air at room temperature

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“…Light amplification in carbon nanotubes was experimentally demonstrated in the near-infrared wavelength range at cryo [3] and room temperatures [4], as a single photon emitter through dimensionality modification [5], by tuning the direct band-gap, controlling excitonic recombinations, and enabling exciton radiatively-decaying. Device examples of light emission from CNTs have previously demonstrated a p-n diode [6,7], tube to waveguidecoupling [8,9], flat plane-emission panels [10], and flexible light-emitting sources [11]. However, CNTs-based laser devices operating at a telecom wavelength, which are desired for on-chip optical interconnects, are not reported to date.…”

Section: Introductionmentioning

confidence: 99%

Electrically-driven carbon nanotube-based plasmonic laser on silicon

Liu¹,

Sorger²

2015

Opt. Mater. Express

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Photonic signal processing requires efficient on-chip light sources with higher modulation bandwidths. Today's conventional fastest semiconductor diode lasers exhibit modulation speeds only on the order of a few tens of GHz due to gain compression effects and parasitic electrical capacitances. Here we theoretically show an electrically-driven carbon nanotube (CNT)-based laser utilizing strong light-matter-interaction via monolithic integration into Silicon photonic crystal nanobeam (PCNB) cavities. The laser is formed by single-walled CNTs inside a combo-cavity consisting of both a plasmonic metal-oxide-semiconductor hybrid mode embedded in the one dimensional PCNB cavity. The emission originates from interband recombinations of electrostatically-doped nanotubes depending on the tubes' chirality towards matching the C-band. Our simulation results show that the laser operates at telecom frequencies resulting in a power output > 3 (100) µW and > 100 (1000)'s GHz modulation speed at 1 × (10 ×) threshold. Such monolithic integration schemes provide an alternative promising approach for light source in future photonic integrated circuits.

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Flexible Light-Emitting Devices Based on Chirality-Sorted Semiconducting Carbon Nanotube Films

Cited by 19 publications

References 28 publications

Recent Advances in Applications of Sorted Single‐Walled Carbon Nanotubes

Recent Advances in Applications of Sorted Single‐Walled Carbon Nanotubes

Polarization‐Sensitive Single‐Wall Carbon Nanotubes All‐in‐One Photodetecting and Emitting Device Working at 1.55 µm

Electrically-driven carbon nanotube-based plasmonic laser on silicon

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