Flexible InSnZnO Thin Film Phototransistors for Deep Ultraviolet Detection

Lin, Delang; Zhou, Changjian; Luo, Dongxiang; Liu, Baiquan; Chen, Rongsheng

doi:10.1109/led.2023.3273212

IEEE Electron Device Lett.

2023

DOI: 10.1109/led.2023.3273212

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Flexible InSnZnO Thin Film Phototransistors for Deep Ultraviolet Detection

Delang Lin

Changjian Zhou

Dongxiang Luo

et al.

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Cited by 2 publications

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P‐1.4: Synergistic Enhancement of Stability and Mobility in ZrO₂‐Doped ITZO TFTs with MLO Passivation

Lin,

Chen

2024

Symp Digest of Tech Papers

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To completely improve the stability of ZnO‐based thin‐film transistors (TFTs), we propose a comprehensive optimization strategy for ITZO TFTs. We perform ZrO2 doping of the active layer and organic passivation of the back‐channel surfaces of ITZO TFTs with bottom‐gate top contact. The combination of a multifunctional laminated organic passivation layer and a ZrO2‐doped active layer enables ITZO TFTs to provide improved electrical and optical stress stability and excellent thermal stress stability. The results show that ZrO2‐doped ITZO TFTs have a wider effective application temperature range and maintain excellent transistor characteristics compared to undoped devices. It also exhibits excellent reliability in terms of negative bias gate stress testing, which cannot be improved by back‐channel surface passivation.

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P‐1.4: Synergistic Enhancement of Stability and Mobility in ZrO₂‐Doped ITZO TFTs with MLO Passivation

Lin,

Chen

2024

Symp Digest of Tech Papers

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Ultraviolet-sensitive and power-efficient oxide phototransistor enabled by nanometer-scale thickness engineering of InZnO semiconductor and gate bias modulation

Zhang,

Ju,

Lee

et al. 2023

Applied Physics Letters

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Amorphous oxide semiconductor photodetectors (PDs) are promising ultrasensitive and power-efficient ultraviolet (UV) PDs because they generate low dark current in the dark and exhibit high photoresponse under UV irradiation owing to their superior UV absorption and photocarrier transport characteristics. Herein, we demonstrate UV-sensitive and power-efficient oxide phototransistors through the nanometer-scale engineering of oxide semiconductors and appropriate modulation of gate bias conditions. The dark current and photocurrent of an oxide phototransistor exhibit a trade-off relationship in terms of the thickness of the oxide semiconductor film. Ultrathin InZnO is disadvantageous for fabricating UV-sensitive PDs because of its low photoresponse. In contrast, excessively thick InZnO is disadvantageous for fabricating power-efficient UV PDs owing to its high dark current. However, the InZnO film with an optimal film thickness of 8 nm can simultaneously provide the advantages of both ultrathin and excessively thick cases owing to its low intrinsic carrier concentration and sufficient UV absorption depth. Consequently, an InZnO phototransistor with high UV-sensing performance (Smax = 1.25 × 106), low-power operation capability (Idark = ∼10−13A), and excellent repeatability is realized by using an 8-nm-thick InZnO semiconductor and applying appropriate gate bias modulation (constant gate bias for maximized photosensitivity and temporal positive bias pulse for persistence photocurrent elimination).

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Flexible InSnZnO Thin Film Phototransistors for Deep Ultraviolet Detection

Cited by 2 publications

References 33 publications

P‐1.4: Synergistic Enhancement of Stability and Mobility in ZrO₂‐Doped ITZO TFTs with MLO Passivation

P‐1.4: Synergistic Enhancement of Stability and Mobility in ZrO₂‐Doped ITZO TFTs with MLO Passivation

Ultraviolet-sensitive and power-efficient oxide phototransistor enabled by nanometer-scale thickness engineering of InZnO semiconductor and gate bias modulation

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About

Flexible InSnZnO Thin Film Phototransistors for Deep Ultraviolet Detection

Cited by 2 publications

References 33 publications

P‐1.4: Synergistic Enhancement of Stability and Mobility in ZrO2‐Doped ITZO TFTs with MLO Passivation

P‐1.4: Synergistic Enhancement of Stability and Mobility in ZrO2‐Doped ITZO TFTs with MLO Passivation

Ultraviolet-sensitive and power-efficient oxide phototransistor enabled by nanometer-scale thickness engineering of InZnO semiconductor and gate bias modulation

Contact Info

Product

Resources

About

P‐1.4: Synergistic Enhancement of Stability and Mobility in ZrO₂‐Doped ITZO TFTs with MLO Passivation

P‐1.4: Synergistic Enhancement of Stability and Mobility in ZrO₂‐Doped ITZO TFTs with MLO Passivation