2016
DOI: 10.1039/c5tc03307a
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Flexible inkjet printed high-k HfO2-based MIM capacitors

Abstract: The soaring global demand for flexible, wearable and transparent devices has created an urgent need for new fabrication technologies that are both cost-competitive and eco-friendly.

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Cited by 47 publications
(33 citation statements)
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“…This was also the first report demonstrating feasibility of bar coating technique for the fabrication of high quality uniform oxide dielectric with extraordinary dielectric performance. Besides these noteworthy achievements, many other studies have investigated solution processed high κ oxide dielectrics using printing techniques …”
Section: Recent Achievements Of Oxide High κ Dielectrics Using Solutimentioning
confidence: 99%
“…This was also the first report demonstrating feasibility of bar coating technique for the fabrication of high quality uniform oxide dielectric with extraordinary dielectric performance. Besides these noteworthy achievements, many other studies have investigated solution processed high κ oxide dielectrics using printing techniques …”
Section: Recent Achievements Of Oxide High κ Dielectrics Using Solutimentioning
confidence: 99%
“…We have optimized the ink properties based on existing formulations, which dictate that an ideal ink for a DOD system should have a particle size less than 100 times the nozzle diameter, viscosity and surface tension in the range of 2-20 mPa s and 30-60 mN m À1 respectively. 42,43 2 Materials and methods…”
Section: Introductionmentioning
confidence: 99%
“…[457,458] Furthermore, PMMA/BaTiO 3 nanoparticles inks have been assembled into dielectric films using inkjet printing, [411] screen printing, [260] and gravure printing [259] for SWCNT FETs. [459] A new synthesis method has recently been developed that produces ≈5 nm HfO 2 nanoparticles, [460] which may further improve the quality of HfO 2based printed dielectrics. The dielectric constant of printed PMMA/BaTiO 3 is ≈17 at a thickness of 1.5 μm, which corresponds to an average areal capacitance of 10.8 nF cm −2 .…”
Section: High-κ Nanoparticle Inks For Gate Dielectricsmentioning
confidence: 99%
“…For example, inks containing 50 wt% 25 nm-diameter HfO 2 nanoparticles have been inkjet printed, resulting in di electric thin films with κ = 12.6. [459] A new synthesis method has recently been developed that produces ≈5 nm HfO 2 nanoparticles, [460] which may further improve the quality of HfO 2based printed dielectrics.…”
Section: High-κ Nanoparticle Inks For Gate Dielectricsmentioning
confidence: 99%