2019
DOI: 10.1109/jeds.2019.2913765
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Flexible Green Perovskite Light Emitting Diodes

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Cited by 6 publications
(5 citation statements)
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“…For r b = ∞(flat), there is a slight increase in current density, brightness, and efficiency with an increase of lighting times. The slight increase in efficiency can be attributed to light-induced healing in the perovskite layer . The corresponding photos of devices with different r b values are shown in Figure S10f.…”
Section: Resultsmentioning
confidence: 99%
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“…For r b = ∞(flat), there is a slight increase in current density, brightness, and efficiency with an increase of lighting times. The slight increase in efficiency can be attributed to light-induced healing in the perovskite layer . The corresponding photos of devices with different r b values are shown in Figure S10f.…”
Section: Resultsmentioning
confidence: 99%
“…The slight increase in efficiency can be attributed to light-induced healing in the perovskite layer. 18 The corresponding photos of devices with different r b values are shown in Figure S10f.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…How to further improve the device performances is constantly being explored. [98] There are optimizations on substrate, [99] electrode, [100] perovskite EML, [49,101] interface layer, [97f,102] and the light extraction structure. The key parameters that are used to evaluate the performances are the EQE, the current efficiency (CE), the power efficiency (PE), the maximum luminance (L max ), the turn-on voltage (V on ), the flexibility (bending or stretchable), and the operational stability.…”
Section: Optimization Methods Of Fpledsmentioning
confidence: 99%
“…Beside protection, this additional passivation layer can also be also used to improve the mechanical performance of the TFTs by employing a material with mechanical properties (mainly Young's modulus and thickness) comparable to those of the substrate, placing thereby the device in the so-called neutral axis [74]. A further distinction is given by the position of the source/drain contact: source and drain electrodes sharing the same side of the semiconductive layer with respect to the dielectric, or being on opposite once, lead to staggered [75][76][77][78] (figure 3(a)) and coplanar [79][80][81] configurations, respectively. To improve the charge carrier control in the semiconductor (and therefore enhance the DC performance), a double-gate (DG) configuration (figure 3(b)) can be employed [82][83][84].…”
Section: Tft Configurationmentioning
confidence: 99%