Flexible Fullerene Field‐Effect Transistors Fabricated Through Solution Processing

Sung, Chao Feng; Kekuda, Dhananjaya; Chu, Leiqiang; Lee, Yuh Zheng; Chen, Fang‐Chung; Wu, Mengyuan; Chu, Chih Wei

doi:10.1002/adma.200901215

Cited by 61 publications

(51 citation statements)

References 38 publications

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“…[ 6 ] Therefore, in this study, we also used solution processing to fabricate small-molecule BHJ ambipolar transistors based on blends of OP-BTDT and P-BTDT (M-BTDT) with C 60 . Metallic Au was selected as the source and drain (S/D) electrode material.…”

Section: Resultsmentioning

confidence: 99%

“…Several conjugated organic compounds and polymers have been developed with promising carrier mobilities, comparable to that of amorphous silicon. [4][5][6] To exploit such materials in a wider range of practical applications, high-performance inverters, which are the building blocks of integrated circuits (ICs), must be developed. Complementary metal-oxide semiconductor (CMOS) technology is desirable for the preparation of ICs because it provides straightforward circuit design, good noise margins, low power consumption, and robust operation.…”

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confidence: 99%

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Solution‐Processed Small‐Molecule Bulk Heterojunction Ambipolar Transistors

Cheng

Huang

Ramesh

et al. 2013

Adv Funct Materials

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Organic thin-fi lm transistors (OTFTs) have attracted much attention due to their potential applications in high-value, low-cost electronic devices, including displays, sensors, radio-frequency identifi cation components, and e-papers. [1][2][3] Current research in OTFT materials is focused primarily on the design and synthesis of conjugated organic compounds and polymers that are environmentally stable and capable of carrier transport. Several conjugated organic compounds and polymers have been developed with promising carrier mobilities, comparable to that of amorphous silicon. [4][5][6] To exploit such materials in a wider range of practical applications, high-performance inverters, which are the building blocks of integrated circuits (ICs), must be developed. Complementary metal-oxide semiconductor (CMOS) technology is desirable for the preparation of ICs because it provides straightforward circuit design, good noise margins, low power consumption, and robust operation. Organic CMOS technology requires the use of p-and n-type transistors on the same substrate; however, the separate vacuum-deposition of p-and n-type semiconductors increases the complexity of the circuit fabrication process. [ 7,8 ] To overcome this problem, researchers have explored several strategies, including: i) ambipolar OTFTs featuring symmetric or asymmetric source and drain electrodes for single organic semiconductors; [9][10][11][12] ii) bilayer structures consisting of hole-and electron-transporting organic compounds; [13][14][15][16] and iii) blending two organic semiconductors with different polarities to eliminate the need to pattern the p-and n-channel semiconductors in separation regions. [17][18][19][20] In a single-material confi guration, the effi cient injection of both holes and electrons is the key factor affecting the performance of ambipolar OTFTs. Improved carrier mobility can be achieved by lowering the barrier between the energy levels of the metal and those of the highest occupied molecular orbital (HOMO) of the organic semiconductor for hole transport, and of the lowest unoccupied molecular orbital (LUMO) for electron transport. Most organic semiconductors have a wide band gap (ca. 2-3 eV), resulting in a mismatch between the work function of the electrode and the organic semiconductor for at least one of the carriers. Although devices featuring asymmetric electrodes could circumvent this drawback, the preparation of such a device demands an additional deposition step. Therefore, several research groups have investigated the use of a bilayer structure, with carrier mobility of electrons and holes reaching as Shiau-Shin Cheng , Peng-Yi Huang , Mohan Ramesh , Hsiu-Chieh Chang , Li-Ming Chen , Chia-Ming Yeh , Chun-Lin Fung , Meng-Chyi Wu , Chung-Chi Liu , Choongik Kim ,* Hong-Cheu Lin , Ming-Chou Chen ,* and Chih-Wei Solution-Processed Small-Molecule Bulk Heterojunction Ambipolar Transistors

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%

Solution‐Processed Small‐Molecule Bulk Heterojunction Ambipolar Transistors

Cheng

Huang

Ramesh

et al. 2013

Adv Funct Materials

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“…[1][2][3][4][5][6][7] Independent control of injection and transport of charge carriers (both electrons and holes) is important for the fabrication of field effect transistors and complementary logic circuits. [8][9][10][11][12][13] These applications are constrained by difficulties in achieving balanced charge transport, which could lead to simplification of circuit designs and reduction of power dissipation.…”

Section: Doi: 101002/adma201104375mentioning

confidence: 99%

Controlled Ambipolar Charge Transport Through a Self‐Assembled Gold Nanoparticle Monolayer

Zhou

Han

et al. 2012

Advanced Materials

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An active mechanism for controlling ambipolar charge transport is developed based on self-assembled monolayers of gold nanoparticles. Electron and hole currents are manipulated by controlling the gate bias in order to overcome the intrinsic material limitations. The endurance and retention measurements confirm that this method exhibits good electrical reliability and stability. This solution process approach has potential for applications in large-area printed electronic devices.

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“…It is well known that the organic thin-film transistors (OTFTs) show their unique advantages over the conventional inorganic electronics, such as flexibility, light weight, and low cost etc, and thus they are attracting extensive interest recently [1][2][3] .…”

Section: Introductionmentioning

confidence: 99%