2013
DOI: 10.1002/smll.201370112
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Flexible Electronics: Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes (Small 19/2013)

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Cited by 125 publications
(75 citation statements)
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“…While the bulk phase exhibits a semiconductor character with an indirect gap, the single layer presents a direct gap [1][2][3]. This interesting and promising property can be exploited for applications in nanoelectronics, optoelectronics, spintronics, catalysis, and energy storage [4][5][6][7][8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%
“…While the bulk phase exhibits a semiconductor character with an indirect gap, the single layer presents a direct gap [1][2][3]. This interesting and promising property can be exploited for applications in nanoelectronics, optoelectronics, spintronics, catalysis, and energy storage [4][5][6][7][8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%
“…One particularly promising application for the 2D crystals is flexible electronics, because of their strong in-plane bonding and high flexibility [8][9][10][11][12][13] . MoS 2 atomic layers are competitive candidates with suitable electronic structures [14][15][16] .…”
mentioning
confidence: 99%
“…In addition, the MoS 2 -based field effect transistors have shown outstanding performances with high ON/OFF ratios 6 . Moreover, high-performance MoS 2 thin-film transistors and gas sensors have been fabricated on flexible substrates [10][11][12][13] . It is important to study the 2D-MoS 2 mechanical properties for their reliable applications in flexible electronic devices.…”
mentioning
confidence: 99%
“…These properties suggest that monolayer MX 2 has the potential to be candidate within flexible 2D nano-optoelectronics. Mechanical strain is an important parameter in determining the performance of flexible devices 20 21 22 23 24 25 26 27 . It can strongly modify electronic structure and optical properties of 2D semiconductors.…”
mentioning
confidence: 99%