Handbook of Visual Display Technology 2016

DOI: 10.1007/978-3-319-14346-0_62

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Flexible Displays: Substrate and TFT Technology Options and Processing Strategies

Kalluri R. Sarma¹

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Cited by 4 publications

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“…The barrier lm intends to block moisture absorption and support the integrity as a mechanical buffer. Considering process integrity, SiO 2 or Al 2 O 3 is extensively used as a barrier layer 20 . TFT has a broad range of applications in displays and exible devices, and several channel materials have been extensively studied, including low-temperature polycrystalline silicon (LTPS) 21,22 .…”

Section: Introductionmentioning

confidence: 99%

Highly Reliable Flexible Device with a Charge Compensation Layer

¹

,

²

,

³

et al. 2022

ACS Appl. Mater. Interfaces

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Flexible devices fabricated with polyimide (PI) substrate are crucial for foldable, rollable, or stretchable products in various applications. However, inherent technical challenges remain in mobile charge induced device instabilities and image retention, signi cantly hindering future technologies. We introduced a new barrier material, SiCOH, into the backplane of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-lm transistors (TFTs) that were then implemented into production-level exible panels. We found that the SiCOH layer effectively compensates the surface charging induced by uorine ions at the interface between the PI substrate and the barrier layer under bias stress, thereby preventing abnormal positive V th shifts and image disturbance. The a-IGZO TFTs, metal-insulator-metal (MIM), and metalinsulator-semiconductor (MIS) capacitors with the SiCOH layer demonstrate reliable device performance, V th shifts, and capacitance changes with an increase in the gate bias stress. A exible device with SiCOH enables the suppression of abnormal V th shifts associated with PI and plays a vital role in the degree of image sticking phenomenon. This work provides new inspirations to creating much improved process integrity and paves the way for expediting versatile form-factors.

“…The barrier lm intends to block moisture absorption and support the integrity as a mechanical buffer. Considering process integrity, SiO 2 or Al 2 O 3 is extensively used as a barrier layer 20 . TFT has a broad range of applications in displays and exible devices, and several channel materials have been extensively studied, including low-temperature polycrystalline silicon (LTPS) 21,22 .…”

Section: Introductionmentioning

confidence: 99%

Highly Reliable Flexible Device with a Charge Compensation Layer

¹

,

²

,

³

et al. 2022

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Flexible devices fabricated with polyimide (PI) substrate are crucial for foldable, rollable, or stretchable products in various applications. However, inherent technical challenges remain in mobile charge induced device instabilities and image retention, signi cantly hindering future technologies. We introduced a new barrier material, SiCOH, into the backplane of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-lm transistors (TFTs) that were then implemented into production-level exible panels. We found that the SiCOH layer effectively compensates the surface charging induced by uorine ions at the interface between the PI substrate and the barrier layer under bias stress, thereby preventing abnormal positive V th shifts and image disturbance. The a-IGZO TFTs, metal-insulator-metal (MIM), and metalinsulator-semiconductor (MIS) capacitors with the SiCOH layer demonstrate reliable device performance, V th shifts, and capacitance changes with an increase in the gate bias stress. A exible device with SiCOH enables the suppression of abnormal V th shifts associated with PI and plays a vital role in the degree of image sticking phenomenon. This work provides new inspirations to creating much improved process integrity and paves the way for expediting versatile form-factors.

Charging Compensation Layer on Polyimide for Enhanced Device Stability in Flexible Technology

¹

,

²

,

³

et al. 2021

Electron. Mater. Lett.

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No abstract

Highly Reliable Flexible Device With Charge Compensation Layer

¹

,

²

,

³

et al. 2022

Preprint

View full text Add to dashboard Cite

Flexible devices fabricated with polyimide (PI) substrate are crucial for foldable, rollable, or stretchable products in various applications. However, inherent technical challenges remain in mobile charge induced device instabilities and image retention, significantly hindering future technologies. We introduced a new barrier material, SiCOH, into the backplane of amorphous indium-gallium-zinc-oxide (a–IGZO) thin-film transistors (TFTs) that were then implemented into production-level flexible panels. We found that the SiCOH layer effectively compensates the surface charging induced by fluorine ions at the interface between the PI substrate and the barrier layer under bias stress, thereby preventing abnormal positive Vth shifts and image disturbance. The a–IGZO TFTs, metal-insulator-metal (MIM), and metal-insulator-semiconductor (MIS) capacitors with the SiCOH layer demonstrate reliable device performance, Vth shifts, and capacitance changes with an increase in the gate bias stress. A flexible device with SiCOH enables the suppression of abnormal Vth shifts associated with PI and plays a vital role in the degree of image sticking phenomenon. This work provides new inspirations to creating much improved process integrity and paves the way for expediting versatile form-factors.

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