Flexible correlated 4d2 SrMoO3/mica thin films with enhanced optoelectronic performance and high bending stability

Liu, Jindong

doi:10.1016/j.ceramint.2023.04.076

Cited by 7 publications

(4 citation statements)

References 44 publications

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“…High-quality single-crystalline SMO films are mainly grown by PLD and molecular beam epitaxy (MBE), so all the films listed in the table were grown using PLD or MBE, and they were epitaxially grown on the substrates with good crystalline quality. Most SMO films reported by various groups were grown under highly reducing (Ar or Ar-H 2 gas mixture) atmospheres. ,, The SMO films with a similar thickness grown at a base pressure by PLD in this study demonstrate superior transparent conductivity in the near-UV to visible wavelength region. On the one hand, the highest reported transmittance of the SMO films in the near-UV to visible wavelength region is about 75–91% for the 21 nm-thick films on LSAT synthesized by suboxide MBE .…”

Section: Resultsmentioning

confidence: 58%

“…Most SMO films reported by various groups were grown under highly reducing (Ar or Ar-H 2 gas mixture) atmospheres. 21,41,50 The SMO films with a similar thickness grown at a base pressure by PLD in this study demonstrate superior transparent conductivity in the near-UV to visible wavelength region. On the one hand, the highest reported transmittance of the SMO films in the near-UV to visible wavelength region is about 75−91% for the 21 nm-thick films on LSAT synthesized by suboxide MBE.…”

Section: Resultsmentioning

confidence: 61%

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High UV Transparent Conductivity of SrMoO₃ Thin Films

Jia,

Chen,

Nan

et al. 2024

Crystal Growth & Design

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The perovskite oxide SrMoO 3 has attracted significant attention for its potential applications in ultraviolet (UV) transparent conductors. Thus far, synthesizing high-quality epitaxial SrMoO 3 thin films by pulsed laser deposition (PLD) is usually under highly reducing (Ar or Ar-H 2 gas mixture) atmospheres. Here, we grew SrMoO 3 epitaxial films using the PLD technique at a base pressure below 1 × 10 −5 Pa without any gas supply to optimize their optical and electrical properties. By depositing these films on the (001) SrTiO 3 , (001) LaAlO 3 , and (001) MgO substrates, the as-grown SrMoO 3 films, with a nominal lattice mismatch in the range of −4.8 to +5.7% and a thickness of 20−60 nm, show prominent transparent conductivity in both visible and UV wavelengths. All the films exhibit metallic-like conductivity, with a room-temperature resistivity varying from 10 to 60 μΩ•cm. The resistivity increases with decreasing thickness. Notably, we can achieve extremely high transmittance, exceeding 80% for wavelengths ranging from 300 to 500 nm, and a low resistivity of approximately 20 μΩ•cm in SrMoO 3 films as thin as 20 nm. The excellent UV transparent conducting properties that are insensitive to the substrate type and film thickness make SrMoO 3 films a promising material for various photoelectronic devices and energy-harvesting applications.

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Section: Resultsmentioning

confidence: 58%

Section: Resultsmentioning

confidence: 61%

High UV Transparent Conductivity of SrMoO₃ Thin Films

Jia,

Chen,

Nan

et al. 2024

Crystal Growth & Design

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“…One ε b direction is along crystallographic orientation ( CO ) [210] and the other one is along CO [010]. Considering that the thickness of V 2 O 3 film is significantly smaller than that of mica substrate, the applied ε b value is estimated by ε b = t r Here, t indicates the half thickness of the remaining mica substrate, which is approximately 15 μm after mechanical cleavage, and r represents the bending radius. , Here, a positive ε b value indicates a tensile (outward) bending, while a negative ε b value indicates a compressive (inward) one. As for a flat film, ε b is assigned as a zero value.…”

Section: Resultsmentioning

confidence: 99%

“…In the current work, we investigate the charge transport behaviors in flexible V 2 O 3 /mica films under an applied ε b in two different bending directions, as Here, t indicates the half thickness of the remaining mica substrate, which is approximately 15 μm after mechanical cleavage, and r represents the bending radius. 52,53 Here, a positive ε b value indicates a tensile (outward) bending, while a negative ε b value indicates a compressive (inward) one. As for a flat film, ε b is assigned as a zero value.…”

Section: Analysis Of Mechanical Bending Strain Effect On the Mit Char...mentioning

confidence: 99%

Mechanical Bending Strain-Actuated Modulation of Metal–Insulator Transition Temperature in Flexible Epitaxial V₂O₃ Films

Liu,

Chen

2024

ACS Appl. Electron. Mater.

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In the era of the Internet of Things, flexible oxide electronics have been intensely investigated due to their unique advantages in portability, pliability, and stability. Among various oxide material systems, correlated electron materials (CEMs) have attracted significant attention, because they can display a broad range of intriguing phenomena such as colossal magnetoresistance, high-temperature superconductivity, and a metal–insulator transition (MIT). Tuning the electronic properties of CEMs featuring MIT behavior through the use of external stimuli is a prerequisite for developing CEM-based devices. Here we report a strong mechanical bending strain-actuated modulation of the MIT temperature (T MIT ) in flexible V2O3/mica heterostructures. The epitaxial V2O3 thin films on flexible mica substrates were prepared by a pulsed-laser deposition (PLD) technique. Depending on the growth conditions, various lattice parameter ratios (c/a) and distinct different electronic transport properties were found in a series of V2O3/mica films. For the V2O3 films with c/a = 2.84 and 2.82, MIT behaviors were observed at T MIT ≈ 155 K and ≈ 172 K, respectively. Mechanical bending strain imposed from buckling the mica substrates was shown to remarkably modulate the T MIT (ΔT MIT ≈ 30 K) in these flexible V2O3 films. Additionally, we note that the bending response of T MIT in the V2O3 films relies on the applied bending strain direction. Bending cyclic tests manifest a good repetition of the experimental results and superior mechanical durability in flexible V2O3 films. The present work is highly instructive for flexible electronic device applications and provides an alternative platform for studying MIT behaviors of the CEMs in general.

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High-performance orthorhombic correlated transparent conducting epilayer integrated on a flexible mica substrate: The case of CaMoO3

Liu

2024

Ceramics International

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Flexible correlated 4d2 SrMoO3/mica thin films with enhanced optoelectronic performance and high bending stability

Cited by 7 publications

References 44 publications

High UV Transparent Conductivity of SrMoO₃ Thin Films

High UV Transparent Conductivity of SrMoO₃ Thin Films

Mechanical Bending Strain-Actuated Modulation of Metal–Insulator Transition Temperature in Flexible Epitaxial V₂O₃ Films

High-performance orthorhombic correlated transparent conducting epilayer integrated on a flexible mica substrate: The case of CaMoO3

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Flexible correlated 4d2 SrMoO3/mica thin films with enhanced optoelectronic performance and high bending stability

Cited by 7 publications

References 44 publications

High UV Transparent Conductivity of SrMoO3 Thin Films

High UV Transparent Conductivity of SrMoO3 Thin Films

Mechanical Bending Strain-Actuated Modulation of Metal–Insulator Transition Temperature in Flexible Epitaxial V2O3 Films

High-performance orthorhombic correlated transparent conducting epilayer integrated on a flexible mica substrate: The case of CaMoO3

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Product

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About

High UV Transparent Conductivity of SrMoO₃ Thin Films

High UV Transparent Conductivity of SrMoO₃ Thin Films

Mechanical Bending Strain-Actuated Modulation of Metal–Insulator Transition Temperature in Flexible Epitaxial V₂O₃ Films