Flexible Complementary Logic Gates Using Inkjet-Printed Polymer Field-Effect Transistors

Baeg, Kang‐Jun; Khim, Dongyoon; Kim, Juhwan; Kim, Dong‐Yu; Sung, Si-Woo; Yang, Byung‐Do; Noh, Yong‐Young

doi:10.1109/led.2012.2226556

Cited by 49 publications

(43 citation statements)

References 15 publications

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“…The most significant outcome of the pdoping in this system is the dramatic increase in the hole mobility. By calculating average mobility values from 16 TFTs, the hole mobility was found to increase from 2.4 cm 2 / Vs in the pristine C 8 -BTBT:C 16 IDT-BT blend OTFTs to 9.4 cm 2 /Vs for the doped C 8 -BTBT:C 16 IDT-BT:C 60 F 48 (1%) devices, demonstrating the robust performance of these ternary blend OTFTs. The improvements in mobility and operational characteristics can be attributed to the dopant that deactivates deep traps and generates additional mobile holes within the system.…”

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confidence: 97%

“…We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (C 16 IDT-BT) and the p-type dopant C 60 F 48 was employed, whereas the isotype In 2 O 3 /ZnO heterojunction was used for the nchannel TFTs. When integrated on the same substrate, p-and n-channel devices exhibited balanced carrier mobilities up to 10 cm Emerging technology concepts such as the Internet-ofThings (IoT), printed, flexible and wearable electronics and sensors depend on semiconductor technologies that are characterized by low cost, mechanical flexibility and high electrical performance.…”

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confidence: 99%

“…Complementary logic is of critical importance for the development of integrated circuits, as it enables both a dramatic reduction of the circuit's power dissipation, as compared to the unipolar logic circuits, and large-scale integration with high manufacturing yield. [15][16][17][18] To address this issue, significant efforts have been made to develop hybrid complementary circuits by combining p-channel organic TFTs with n-channel metal oxide TFTs. [19][20][21][22] However, the vast majority of the hybrid circuits demonstrated to date rely on costly vacuumbased processing techniques such as sputtering, 19,20,23 ALD, 24 and/or required high temperature processing that is incompatible with inexpensive flexible substrate materials such as plastic.…”

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confidence: 99%

“…This unique microstructure has been shown to facilitate low conductivity grain boundaries and as a result exhibits excellent hole transport characteristics. 39 For the purpose of this study, we employed a ternary blend of C 8 -BTBT:C 16 IDT-BT p-doped with C 60 F 48 (C 8 -BTBT:C 16 IDT-BT:C 60 F 48 (1%)), which has shown to exhibit significantly improved hole transport characteristics with maximum hole mobility values exceeding 13 cm 2 /Vs. 11 Figure 2(b) shows the transfer characteristics of C 8 -BTBT:C 16 IDT-BT TFTs before and after p-doping with C 60 F 48 (1%), with the p-doping having a dramatic impact on the TFT operation.…”

mentioning

confidence: 99%

“…39 For the purpose of this study, we employed a ternary blend of C 8 -BTBT:C 16 IDT-BT p-doped with C 60 F 48 (C 8 -BTBT:C 16 IDT-BT:C 60 F 48 (1%)), which has shown to exhibit significantly improved hole transport characteristics with maximum hole mobility values exceeding 13 cm 2 /Vs. 11 Figure 2(b) shows the transfer characteristics of C 8 -BTBT:C 16 IDT-BT TFTs before and after p-doping with C 60 F 48 (1%), with the p-doping having a dramatic impact on the TFT operation. The addition of C 60 F 48 is found to suppress electron transport, reduce V TH from À36 V to À25 V (Figure 2(b) and Figure S1 of supplementary material), minimize operating hysteresis and increase the ON current and the OFF current, which are all indicative signs of p-type doping.…”

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confidence: 99%

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Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

Isakov

Paterson

Solomeshch

et al. 2016

Applied Physics Letters

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We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 °C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (C16IDT-BT) and the p-type dopant C60F48 was employed, whereas the isotype In2O3/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm2/Vs. Hybrid complementary inverters based on these devices show high signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.

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confidence: 97%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

Isakov

Paterson

Solomeshch

et al. 2016

Applied Physics Letters

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High Mobility Amorphous Polymer‐Based 3D Stacked Pseudo Logic Circuits through Precision Printing

Kim,

Ryu,

Nam

et al. 2024

Adv Funct Materials

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Direct printing of conjugated polymer thin‐film transistors enables the fabrication of deformable devices with low cost, high throughput, and large area. However, a relatively poor device performance of printed devices remains a major obstacle to their application in high‐end display backplanes and integrated circuits. In this study, high‐performance and highly stackable printed organic transistors is developed, arrays, and circuits using a near‐amorphous polymer, indacenodithiophene‐co‐benzothiadiazole (IDT‐BT). The printed devices exhibited high saturation mobility (>1 cm2 V−1 s−1), high on/off ratio (>107), and low subthreshold slope (245 mV dec−1). In addition, 16 × 16 printed IDT‐BT arrays achieved 100% fabrication yield, with excellent device‐to‐device uniformity and low variations of mobility (9.55%) and threshold voltage (4.51%), and good operational and environmental stability (>365 days). Furthermore, five stacked 3D transistors are demonstrated with an excellent 3D uniformity without compromising device performance due to a low required thermal budget for processing amorphous IDT‐BT. Finally, a new concept of 3D universal logic gate with high voltage gain (33.91 V/V) and record density (100 printed transistors per cm2) is proposed and fabricated, which is relevant for the commercialization of low‐cost printed display backplanes and high‐density integrated circuits based on highly processable polymeric semiconductors.

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Toward Printed Integrated Circuits based on Unipolar or Ambipolar Polymer Semiconductors

2013

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For at least the past ten years printed electronics has promised to revolutionize our daily life by making cost-effective electronic circuits and sensors available through mass production techniques, for their ubiquitous applications in wearable components, rollable and conformable devices, and point-of-care applications. While passive components, such as conductors, resistors and capacitors, had already been fabricated by printing techniques at industrial scale, printing processes have been struggling to meet the requirements for mass-produced electronics and optoelectronics applications despite their great potential. In the case of logic integrated circuits (ICs), which constitute the focus of this Progress Report, the main limitations have been represented by the need of suitable functional inks, mainly high-mobility printable semiconductors and low sintering temperature conducting inks, and evoluted printing tools capable of higher resolution, registration and uniformity than needed in the conventional graphic arts printing sector. Solution-processable polymeric semiconductors are the best candidates to fulfill the requirements for printed logic ICs on flexible substrates, due to their superior processability, ease of tuning of their rheology parameters, and mechanical properties. One of the strongest limitations has been mainly represented by the low charge carrier mobility (μ) achievable with polymeric, organic field-effect transistors (OFETs). However, recently unprecedented values of μ ∼ 10 cm(2) /Vs have been achieved with solution-processed polymer based OFETs, a value competing with mobilities reported in organic single-crystals and exceeding the performances enabled by amorphous silicon (a-Si). Interestingly these values were achieved thanks to the design and synthesis of donor-acceptor copolymers, showing limited degree of order when processed in thin films and therefore fostering further studies on the reason leading to such improved charge transport properties. Among this class of materials, various polymers can show well balanced electrons and holes mobility, therefore being indicated as ambipolar semiconductors, good environmental stability, and a small band-gap, which simplifies the tuning of charge injection. This opened up the possibility of taking advantage of the superior performances offered by complementary "CMOS-like" logic for the design of digital ICs, easing the scaling down of critical geometrical features, and achieving higher complexity from robust single gates (e.g., inverters) and test circuits (e.g., ring oscillators) to more complete circuits. Here, we review the recent progress in the development of printed ICs based on polymeric semiconductors suitable for large-volume micro- and nano-electronics applications. Particular attention is paid to the strategies proposed in the literature to design and synthesize high mobility polymers and to develop suitable printing tools and techniques to allow for improved patterning capability required for the down-scaling of devices in order t...

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Flexible Complementary Logic Gates Using Inkjet-Printed Polymer Field-Effect Transistors

Cited by 49 publications

References 15 publications

Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

High Mobility Amorphous Polymer‐Based 3D Stacked Pseudo Logic Circuits through Precision Printing

Toward Printed Integrated Circuits based on Unipolar or Ambipolar Polymer Semiconductors

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