Flexible Artificial Memristive Synapse Constructed from Solution‐Processed MgO–Graphene Oxide Quantum Dot Hybrid Films

Abstract

Inspired by the low energy consumption and highly parallel processing power of the biological neuromorphic system, the development of a brain‐inspired computing paradigm with electronic devices based artificial synapse may play an essential role in eliminating the Von Neumann bottleneck. Among candidate electronic devices, memristive devices have shown great potential for artificial synapse because of its tunable resistive switching (RS) behaviors. Herein, a biological synapse with solution‐processed MgO‐graphene oxide quantum dots (MgO‐GOQDs) based memristor is developed. The device exhibits highly controllable RS behavior owing to the enhancement of the local electric field by GOQDs and redox of GOQDs under electric fields. Moreover, essential biosynaptic functions including paired‐pulse facilitation, short‐term plasticity (STP)/long‐term plasticity (LTP), STP to LTP transition, and spike‐time‐dependent plasticity are successfully emulated. It is noteworthy that the device fabricated on a polyethylene terephthalate substrate also presents stable RS behavior after a large number of bending cycles. This study demonstrates the great potential of solution‐processed MgO–GOQD hybrid film on its application for the realization of flexible artificial neural networks.

Emerging MXene‐Based Memristors for In‐Memory, Neuromorphic Computing, and Logic Operation

“…[4,5] This complex systemic configuration often results in slow data transfer and high power consumption, which confronts inevitable difficulties of von Neumann bottleneck and memory wall. [6][7][8][9][10][11] To address these issues, the development of new-generation data storage and computing technology becomes more urgent than ever. [12,13] Recently, memristors, which were theoretically proposed by Leon Chua [14] and first demonstrated by Hewlett Packard laboratory, [15] have aroused tremendous attention due to the advantages of excellent data storage capability, low operating energy, fast response, and in-memory computing potential.…”

Low-Dimensional-Materials-Based Flexible Artificial Synapse: Materials, Devices, and Systems

“…The performance of both memristors and transistors can be enhanced with the outstanding properties of 0D materials [ 51 , 53 , 54 ]. For the application in memristors, conductive or semiconductive QDs were frequently used as the charge-trapping materials to increase uniformity in the performance of resistive switching among different cycles [ 55 ].…”

“…Chen reported a MgO-graphene oxide quantum dot hybrid film with a solution processed method. The device exhibited highly controllable RS behavior, due to the enhancement of the local electric field by QD and the redox of QD under an electric field, and the basic synaptic behavior could be emulated [ 53 , 56 ]. For the application in synaptic transistors, conductive or semiconductive QDs can be embedded in the charge trapping layer or the dielectric/semiconductor interface of the transistor to store the charges.…”

Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications

“…To date, a variety of functional materials have been applied for memristor applications [25][26][27][28][29], including organic materials [30][31][32], inorganic compounds [33][34][35] and organic-inorganic hybrid materials [36][37][38]. In this review, we pay attention to a special class of materials: flexible crystalline materials (CMs).…”