Flexible Artificial Mechanoreceptor Based on Microwave Annealed Morphotropic Phase Boundary of Hf_xZr_1‐xO₂ Thin Film

Abstract

The development of artificial tactile receptor systems is important in the fields of prosthetic devices, interfaces for the metaverse, and sensors. A pressure sensor and memory device may be used in this system to replicate the tactile detecting capabilities of human skin. The implementation of systems that take into account mass production and miniaturization is still difficult. Here, a flexible artificial tactile receptor built using conventional semiconductor processes that combine a vertically stacked piezoelectric sensor with neuromorphic memory is presented. As a fundamental component for both sensors and memory, hafnium zirconium oxide (HZO) formed by using semiconductor deposition technique is introduced. Due to its exceptional piezoelectric performance, the morphotropic phase boundary of HZO is studied. The entire materials and processes are highly compatible with conventional semiconductor processes, including microwave annealing‐based low‐temperature crystallization. Even after 10,000 times of bending stress, the sensor and memory constructed on a flexible substrate exhibit consistent pressure detection characteristics over a wide range of 2–25 kPa. The feasibility of the approach is further demonstrated by a deep neural network simulation, which reached 90.8% braille recognition accuracy. Wearable electronics and medical devices are two examples of industrial domains that can use these flexible, exceptionally durable devices.

Recent Progress in Wearable Near-Sensor and In-Sensor Intelligent Perception Systems

“…A ceramic material is useful due to the strong piezoelectric effect [96,97]. Jung et al [98] created a flexible artificial mechanoreceptor inspired by human skin. The HZO/TaN memristor and SiO 2 electric insulation layer as the memory and HZO w/Al 2 O 3 as the sensor were deposited onto a MICA film layer by plasma-enhanced chemical vapor deposition (Figure 2h).…”

Unlocking the Potential of Hafnia Ferroelectrics: Achieving High Reliability via Plasma Frequency Modulation in Very High-Frequency Plasma-Enhanced Atomic Layer Deposition

“…The phenomenon of ferroelectricity has been thoroughly studied due to its potential uses in nonvolatile semiconductor devices, such as memory devices − energy harvesting, negative capacitance field effect transistors, , and sensors. , In recent times, there has been an increased level of attention toward Hf 0.5 Zr 0.5 O 2 (HZO) because it has the capability to demonstrate ferroelectric characteristics even when its thickness is less than 5 nm . In addition, the advancement of scaled 3D devices using HZO is anticipated to address the existing constraints in artificial intelligence performance due to memory capacity, as demonstrated by HZO ferroelectric memory devices. − Nevertheless, the primary limitation in deploying HZO memory devices is the wake-up effect, fatigue, and endurance caused by inevitable defects. , The wake-up and fatigue refer to the initial rise and subsequent decline in polarization of the ferroelectric device .…”