Flexible and transparent memristive synapse based on polyvinylpyrrolidone/N-doped carbon quantum dot nanocomposites for neuromorphic computing

Zeng, Tao; Yang, Zhi; Liang, Jiabing; Lin, Ya; Cheng, Yankun; Hu, Xiaochi; Zhao, Xiaoning; Wang, Zhongqiang; Liu, Yichun

doi:10.1039/d1na00152c

Cited by 20 publications

(20 citation statements)

References 51 publications

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“…The distributed CQDs inside the SPE might serve as electron-trapping centers. They are responsible for the conduction mechanism by enhancing the localized electric field to accumulate electrons …”

Section: Resultsmentioning

confidence: 99%

“…They are responsible for the conduction mechanism by enhancing the localized electric field to accumulate electrons. 68 Since the CF is proposed as the predominant switching mechanism, we postulate the RS phenomenon to be attributed to a metallic CF based on Al atoms. More specifically, because Au is in charge of the cathodic reaction, the dispersed Al 3+ cations inside the SPE are reduced to Al atoms (Al 3+ + 3e − → Al).…”

Section: Rs Mechanismmentioning

confidence: 91%

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High On/Off Ratio Carbon Quantum Dot–Chitosan Biomemristors with Coplanar Nanogap Electrodes

Raeis‐Hosseini

Georgiadou

Papavassiliou

2022

ACS Appl. Electron. Mater.

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A carbon-based natural nanocomposite material comprising carbon quantum dots (CQDs) is dispersed in a chitosan matrix. The CQD−chitosan nanocomposite serves as a solid polymer electrolyte layer of a biomemristor with a Au/CQD− chitosan/Al structure. The active layer of the CQD−chitosan nanocomposite is deposited from its solution on top of coplanar asymmetric nanogap (∼15 nm) Al−Au electrodes, patterned via adhesion lithography. The CQD−chitosan biomemristor presents a high on/off ratio (>10 6 ) and reproducible and reliable bipolar resistive switching behavior. An endurance of 160 cycles was recorded, while the high and low resistance states remained stable for more than 10 4 s. This study highlights the potential of both the CQD−chitosan material and nanogap electrode structures for application in nanoscale biocompatible memory devices.

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Section: Resultsmentioning

confidence: 99%

Section: Rs Mechanismmentioning

confidence: 91%

High On/Off Ratio Carbon Quantum Dot–Chitosan Biomemristors with Coplanar Nanogap Electrodes

Raeis‐Hosseini

Georgiadou

Papavassiliou

2022

ACS Appl. Electron. Mater.

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“…The 3D in‐memory computing hardware is also feasible if it involves in low‐temperature fabrication process compatible with flexible substrate. [ 204–207 ] HfAlO x has been integrated into flexible 3D memristor array via low‐temperature atomic layer deposition. Each layer of the three‐layer 3D crossbar memristor arrays consists of the HfAlO x sandwiched among the Pt and NaN electrodes, as illustrated in Figure 8e.…”

Section: D In‐memory Computingmentioning

confidence: 99%

Bio‐Inspired 3D Artificial Neuromorphic Circuits

Liu

Wang

et al. 2022

Adv Funct Materials

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Neuromorphic circuits emulating the bio‐brain functionality via artificial devices have achieved a substantial scientific leap in the past decade. However, even with the advent of highly advanced bio‐inspired algorithms, the artificial intelligence based on current neuromorphic circuits is lagging behind significantly when compared with naturally evolved biological neural circuits. This massive and intriguing discrepancy is partly due to the incomprehensive understanding of bio‐brain operating mechanism, which relies heavily on the extremely complexed entangled 3D hierarchical neural networks. Configuring 3D neuromorphic hardware with combined computing and memory functionalities, coupled with compatible progress of software algorithms, can be an inevitable route to surmount the limitation encountered by current 2D artificial circuits. Herein, referring to the neuron configuration in 3D perspective together with detailed signal generation and propagation mechanism, the von Neumann configuration is compared with state‐of‐the‐art in‐memory computing architecture, and the development and perspectives of 3D in‐memory computing neuromorphic circuits are highlighted.

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“…[ 11–15 ] Among them, organic materials have tremendous advantages to construct flexible and wearable ECM memory owing to their mechanical ductility, environmentally friendly, and biocompatible properties. [ 16–18 ] However, the organic ECM memory devices generally suffer from reliability issues, such as insufficient endurance, switching fluctuation, and low switching speed. [ 19–22 ] The root cause is the uncontrollable CF morphology and unexpected CF overgrowth induced by the inherent structural complexities of the organic systems.…”

Section: Introductionmentioning

confidence: 99%

Photocatalysis‐Induced Nanopores toward Highly Reliable Organic Electrochemical Metallization Memory

Zeng

Tao

et al. 2022

Adv Elect Materials

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Organic electrochemical metallization (ECM) memory that possesses high reliable switching performance is in great demand for the future smart wearable and flexible electronics. The resistive switching (RS) behavior of organic ECM memory is determined by the micro‐morphology evolution of metal conductive filaments (CFs) during the operating process. However, the morphology controllability of CFs is generally deteriorated by their random distribution and unexpected overgrowth. Herein, a kind of nanoporous PVC/TiO2 nanocomposite is developed using photocatalytic method for improving the RS reliability of organic ECM memory. The introduction of engineered nanopores can effectively simplify the CFs morphology to obtain excellent uniformity, good retention, and low cycling degradation. In addition, taking advantage of the multilevel RS behavior and 200 × 200 memristive array artificial neural network (ANN), alphabetic data storage and image pattern recognition are successfully realized. The proposed approach is expected to provide novel platforms for the advance of highly reliable flexible electronics and ANN for intelligence applications.

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Flexible and transparent memristive synapse based on polyvinylpyrrolidone/N-doped carbon quantum dot nanocomposites for neuromorphic computing

Abstract: Memristive devices are widely recognized as promising hardware implementations of neuromorphic computing. Herein, a flexible and transparent memristive synapse based on polyvinylpyrrolidone (PVP)/N-doped carbon quantum dot (NCQD) nanocomposites through regulating...

Cited by 20 publications

References 51 publications

High On/Off Ratio Carbon Quantum Dot–Chitosan Biomemristors with Coplanar Nanogap Electrodes

High On/Off Ratio Carbon Quantum Dot–Chitosan Biomemristors with Coplanar Nanogap Electrodes

Bio‐Inspired 3D Artificial Neuromorphic Circuits

Photocatalysis‐Induced Nanopores toward Highly Reliable Organic Electrochemical Metallization Memory

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