Flexible a-IGZO TFT amplifier fabricated on a free standing polyimide foil operating at 1.2 MHz while bent to a radius of 5 mm

Münzenrieder, Niko; Petti, Luisa; Zysset, Christoph; Salvatore, Giovanni A.; Kinkeldei, Thomas; Perumal, Charles; Carta, Corrado; Ellinger, Frank; Tröster, Gerhard

doi:10.1109/iedm.2012.6478982

Cited by 54 publications

(50 citation statements)

References 7 publications

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“…Similar to a plate capacitor, the width-normalized gate capacitance and the chan- 21 (calculated from measured S-parameters). The transit frequency was extracted as the unity-gain frequency of the current-gain h 21 (Fig. S2(d) 19 ).…”

Section: -2mentioning

confidence: 99%

“…18 This leads to the fact that f T values for 1 lm-long IGZO TFTs are <100 MHz ( Figure S2(d) 19 ). 20,21 In fact, if the channel length is reduced below 1 lm the channel resistance becomes smaller than the contact resistance, thus causing the effective mobility l eff ,t o drop. This can be modelled as follows: …”

mentioning

confidence: 99%

“…S3 19 ). 7,12,21,24 Larger strain causes cracks and destroys the TFTs permanently. 18 Due to the ratio between the lateral structure sizes and the layer thicknesses of the TFTs (Fig.…”

mentioning

confidence: 99%

“…The fabrication process is described elsewhere. 18,21 The TFTs exhibit channel length between 10 lm and 0.5 lm, and gate to source/drain overlaps L OV of 15 lm, 5 lm, and 1.5 lm. These dimensions are limited by the deformation of the flexible substrate during the fabrication process.…”

mentioning

confidence: 99%

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Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

Münzenrieder

Salvatore

Petti

et al. 2014

Applied Physics Letters

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Section: -2mentioning

confidence: 99%

mentioning

confidence: 99%

“…S3 19 ). 7,12,21,24 Larger strain causes cracks and destroys the TFTs permanently. 18 Due to the ratio between the lateral structure sizes and the layer thicknesses of the TFTs (Fig.…”

mentioning

confidence: 99%

mentioning

confidence: 99%

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Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

Münzenrieder

Salvatore

Petti

et al. 2014

Applied Physics Letters

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“…These challenges can be addressed by new developments in the area of flexible electronics. In particular the use of oxide semiconductors, such as amorphous InGaZnO (IGZO) [17][18][19], promises to realize high performance active electronic devices on a variety of substrates. Here, we evaluated how IGZO thin-film transistors (TFTs), representing the most important and basic building block of all electronic systems, can be fabricated on a variety of different yarns.…”

Section: Introductionmentioning

confidence: 99%

Oxide Thin-Film Transistors on Fibers for Smart Textiles

et al. 2017

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Smart textiles promise to have a significant impact on future wearable devices. Among the different approaches to combine electronic functionality and fabrics, the fabrication of active fibers results in the most unobtrusive integration and optimal compatibility between electronics and textile manufacturing equipment. The fabrication of electronic devices, in particular transistors on heavily curved, temperature sensitive, and rough textiles fibers is not easily achievable using standard clean room technologies. Hence, we evaluated different fabrication techniques and multiple fibers made from polymers, cotton, metal and glass exhibiting diameters down to 125 µm. The benchmarked techniques include the direct fabrication of thin-film structures using a low temperature shadow mask process, and the transfer of thin-film transistors (TFTs) fabricated on a thin (≈1 µm) flexible polymer membrane. Both approaches enable the fabrication of working devices, in particular the transfer method results in fully functional transistor fibers, with an on-off current ratio >10 7 , a threshold voltage of ≈0.8 V, and a field effect mobility exceeding 7 cm 2 V −1 s −1 . Finally, the most promising fabrication approach is used to integrate a commercial nylon fiber functionalized with InGaZnO TFTs into a woven textile.

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Highly Stable Indium‐Gallium‐Zinc‐Oxide Thin‐Film Transistors on Deformable Softening Polymer Substrates

Gutiérrez-Heredia

Rodriguez‐Lopez

Garcia-Sandoval

et al. 2017

Adv Elect Materials

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more complex applications that more closely mimic the behavior and size scale of biology. To these ends, bioelectronic devices must demonstrate several critical features: be manufacturable via a repeatable fabrication processes; exhibit resistance to mechanical deformation; and demonstrate electrical reliability.Technologies based on TFTs allowed the microfabrication of large-area applications such as flat-panel displays, which were difficult to develop on flexible substrates due to their high temperature processing requirements and were difficult to develop on silicon due to the cost associated with using such a large area of silicon. After Nomura et al. presented TFTs based on indium-gallium-zinc-oxide (IGZO) semiconductors, these became the key component for the fabrication of system-on-glass applications. [9] The electrical performance of IGZO TFTs exhibited high-mobility values (>10 cm 2 V −1 s −1 ) compared with organic semiconductors (<0.1 cm 2 V −1 s −1 ) or amorphous silicon (≈1 cm 2 V −1 s −1 ). [9][10][11] More recently, IGZO has been reported with mobility values of 29 cm 2 V −1 s −1 by Jeon et al. to develop a voltage compensation circuit. [12] A transparent circuit based on IGZO TFTs with mobility of 70 cm 2 V −1 s −1 was presented by Liu et al. with frequency response on the order of megahertz. [13] In addition, Liu et al. incorporated silver nanowires into IGZO to achieve a mobility of 174 cm 2 V −1 s −1 , [14] but with limits on processing and scalability. Due to their relative low processing temperature requirements (compared with silicon technologies) and high-mobility, semiconductor devices made from IGZO allow for the development of emerging technologies such as flexible and wearable electronics: active-matrix phosphorescent organic light emitting diodes displays by O'Brien et al., [15] an amplifier by Münzenrieder et al., [16] and a full color organic light-emitting diodes (OLED)-based display [4] among others.There is a tradeoff among the various processing temperatures used during TFT fabrication, which affects electrical performance and the thermal compatibility with flexible substrates. Important performance characteristics of the electronic components include field effect mobility (μ FE ), threshold voltage (V TH ), changes in V TH (ΔV TH ), and subthreshold swing (SS). The use of elevated temperature during device processing can help improve the quality of amorphous IGZO, as well as its interface with a dielectric. According to Nomura, Flexible electronics are attracting great interest in healthcare, where devices such as thin-film transistors (TFTs) on polymer substrates facilitate biomedical applications requiring complex circuits in soft packages. Consequently, a repeatable process to fabricate reliable, stable electronic components on flexible substrates is required. Here, thermoset thiol-ene/acrylate shape memory polymer (SMP) substrates house indium-gallium-zinc-oxide (IGZO) TFTs and logic circuits: resulting devices exhibit stable behavior after thermal annealing at 250 °C. Fabr...

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Flexible a-IGZO TFT amplifier fabricated on a free standing polyimide foil operating at 1.2 MHz while bent to a radius of 5 mm

Cited by 54 publications

References 7 publications

Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

Oxide Thin-Film Transistors on Fibers for Smart Textiles

Highly Stable Indium‐Gallium‐Zinc‐Oxide Thin‐Film Transistors on Deformable Softening Polymer Substrates

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