2009
DOI: 10.1143/jjap.48.011605
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Flame Detection by a β-Ga2O3-Based Sensor

Abstract: An oxide semiconductor of -Ga 2 O 3 has a natural solar-blind sensitivity due to its large bandgap of 4.8 eV. To evaluate its potential, a flame detector was fabricated using its conductive single crystal substrate applying a simple method without epitaxy and vacuum processes. The structure is a poly(3,4-ethylene dioxythiophene) complex with polystyrene sulfonic acid (PEDOT-PSS) Schottky contact/a semi-insulating layer of -Ga 2 O 3 /n-type region of -Ga 2 O 3 /an In ohmic contact. The spectral response of the … Show more

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Cited by 159 publications
(100 citation statements)
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“…In recent, its nature of a wide-band-gap semiconductor has been rather attracting much attentions towards realizing active devices such as transparent field-effect transistors (FET) [2,3], UV sensors for flame detection [4], and next-generation high-power devices [5,6]. Compared with SiC and GaN in terms of high-power device applications, it is particularly advantageous that large and highquality Ga 2 O 3 single crystals can be synthesized by melt growth techniques such as floating zone [7], Czochralski [8], and edgedefined film-fed growth [9].…”
Section: Introductionmentioning
confidence: 99%
“…In recent, its nature of a wide-band-gap semiconductor has been rather attracting much attentions towards realizing active devices such as transparent field-effect transistors (FET) [2,3], UV sensors for flame detection [4], and next-generation high-power devices [5,6]. Compared with SiC and GaN in terms of high-power device applications, it is particularly advantageous that large and highquality Ga 2 O 3 single crystals can be synthesized by melt growth techniques such as floating zone [7], Czochralski [8], and edgedefined film-fed growth [9].…”
Section: Introductionmentioning
confidence: 99%
“…Recent achievements showing solar-blind photodetectors [2], Shottkybarrier diodes (SBDs) [3,4], and field-effect transistors (FETs) [5,6] have markedly accelerated the interest and research on this material. Among five crystal structures of Ga 2 O 3 (α, β, γ, δ, and ε) orthorhombic β-gallia-structured β-Ga 2 O 3 was reported to be the most stable phase from the thermodynamics [7,8].…”
Section: Introductionmentioning
confidence: 99%
“…Thus, an emitter in this region can be detected when it emits solar blind UV radiation, due to the complete absence of that radiation from the background (called the "blank background") [1][2][3][4]. UV detection has been widely applied, such as for identifying coronas surrounding high-voltage wires [5], the observation, identification, and tracking of space targets [6], fire alarms, and so on [7][8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%