Fixed charges at the HfO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e305" altimg="si3.svg"><mml:msub><mml:mrow/><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math>/SiO2 interface: Impact on the memory window of FeFET

Sk, Masud Rana; Pande, Shubham; Müller, F.; Raffel, Yannick; Lederer, Maximilian; Pirro, L.; Beyer, Sven; Seidel, Konrad; Kämpfe, Thomas; De, Sourav; Chakrabarti, Bhaswar

doi:10.1016/j.memori.2023.100050

Cited by 1 publication

(1 citation statement)

References 22 publications

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“…The reasons can be attributed to the fast switching, high ON‐current ( I ON ) to OFF‐current ( I OFF ) ratio (

\frac{I_{\text{ON}}}{I_{\text{OFF}}}

or dynamic range), bidirectional programmability, endurance, and also retention. [ 4–23 ]…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility

Sunil,

Rana SK,

Lederer

et al. 2024

Advanced Intelligent Systems

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Hafnium oxide (HfO2)‐based ferroelectric field effect transistors (FeFETs) revolutionize the emerging nonvolatile memory area, especially with the potential to replace flash memories for several applications. In this article, the suitability of FeFET memories is investigated, especially FeFET‐based content addressable memory (CAM) cells, as storage‐class memory under junction temperature variations. FeFETs with silicon oxynitride interfacial layer are fabricated and characterized at various temperatures, varying from room temperature to 120 °C. Although the memory window, numbers of programmable states, and endurance deteriorate at high temperatures, FeFETs show excellent robustness in data retention, write latency, and read stability at all temperatures, especially for binary operation. Finally, system‐level simulations using a Simulation Program with Integrated Circuit Emphasis software using experimental data are conducted to gauge the robustness of the data‐search operation using the CAM array under different temperatures. Despite temperature‐variation‐induced changes in FeFET devices, it is observed that binary CAM cells perform robust and unerring search operations for storing and searching data at temperatures up to 120 °C.

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“…The reasons can be attributed to the fast switching, high ON‐current ( I ON ) to OFF‐current ( I OFF ) ratio (

\frac{I_{\text{ON}}}{I_{\text{OFF}}}

or dynamic range), bidirectional programmability, endurance, and also retention. [ 4–23 ]…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility

Sunil,

Rana SK,

Lederer

et al. 2024

Advanced Intelligent Systems

Self Cite

View full text Add to dashboard Cite

show abstract

Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET

Cited by 1 publication

References 22 publications

Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility

Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility

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