Abstract:In this paper, a new five-transistor (5T) single-port Static Random Access Memory (SRAM) cell with voltage assist is proposed. Amongst them, a word line suppression circuit is designed to provide a voltage of the respective connected word line signal in a selected row cells lower than the power supply voltage V DD by a threshold voltage during a read operation, thereby to improve the read/write-ability of the cell. In addition, a voltage control circuit is coupled to the sources corresponding to driver transis… Show more
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