2021
DOI: 10.1016/j.commatsci.2021.110555
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First-principles XANES simulation for oxygen-related defects in Si-O amorphous materials

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Cited by 4 publications
(2 citation statements)
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“…The variable O-K edge and intense ~532 eV peak can also be related to potential reactions during solar wind irradiation and heating. Simulations of amorphous and crystalline SiO 2 have demonstrated that oxygen-excess defects produce a pre-edge peak at ~532 eV 49 , as seen in this apatite grain. Molecular O 2 has a similar pre-peak and has been identified in vesicles in an interplanetary dust particle 47 , although the O or O 2 here is not confined to the vesicles.…”
Section: Discussionmentioning
confidence: 68%
“…The variable O-K edge and intense ~532 eV peak can also be related to potential reactions during solar wind irradiation and heating. Simulations of amorphous and crystalline SiO 2 have demonstrated that oxygen-excess defects produce a pre-edge peak at ~532 eV 49 , as seen in this apatite grain. Molecular O 2 has a similar pre-peak and has been identified in vesicles in an interplanetary dust particle 47 , although the O or O 2 here is not confined to the vesicles.…”
Section: Discussionmentioning
confidence: 68%
“…The O1 site coordinating with two Si atoms connects two SiO 4 tetrahedrons, and the distances to the nearest Yb atoms are larger than 3.5 Å. Despite the large Yb-O distances, the hybridization effects with Yb orbitals may persist since the spectral shape is largely different from those of SiO 2 and Si-O amorphous[49]. The K-edge spectra of O2…”
mentioning
confidence: 99%