First principles study on the influence of vacancy defects on electronic structure and optical properties of Ga0.5Al0.5As photocathodes

Yu, Xiaohua; Ge, Zhonghao; Chang, Benkang; Wang, Meishan; Wang, Honggang

doi:10.1016/j.ijleo.2013.07.058

Cited by 9 publications

(2 citation statements)

References 23 publications

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“…The atomic structures of pure GaAs nanowire surfaces undergo series of changes with the incorporation of metal atoms. All adsorption models are fully relaxed after the geometry optimization through Broyden-Flecher-Goldfarb-Shanno (BFGS) method [35][36][37]. Then, the average layer distance of various nanowire surfaces with metal adatoms are calculated.…”

Section: Resultsmentioning

confidence: 99%

Adsorption mechanism of Pt, Ag, Al, Au on GaAs nanowire surfaces from first-principles

Diao¹,

Liu²,

Xia³

2019

J. Phys.: Condens. Matter

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The electronic and optical properties of metal (M) atoms adsorbed GaAs nanowires are systemically investigated utilizing first-principles calculations based on density functional theory. Different materials (M = Pt, Ag, Al and Au) and different coverages (1M, 2M, 3M and 4M) are considered to construct surface adsorption models. The calculations show that all metal-adsorbed GaAs nanowire surfaces are stable, and the difficulty of metal atom adsorption on nanowire surfaces follows the rule of Ag > Au > Al > Pt. In addition, the layer distance variation of nanowire surfaces after metal atom adsorption mainly take place near the outmost layer region. In 1M coverage case, the work function is reduced by Pt, Ag, Al adsorption, while increased by Au adsorption. Specially, Pt-and Al-adsorbed GaAs nanowire surfaces are direct band gap semiconductors, but Ag-and Au-adsorbed surfaces are indirect band gap. The adsorption of metals on GaAs nanowire surfaces are via chemisorption. Moreover, metal atom adsorption can enlarger the absorption coefficient of GaAs nanowires, which are gradually enhanced with increasing the coverage of metal atoms.

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Section: Resultsmentioning

confidence: 99%

Adsorption mechanism of Pt, Ag, Al, Au on GaAs nanowire surfaces from first-principles

Diao¹,

Liu²,

Xia³

2019

J. Phys.: Condens. Matter

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show abstract

“…The plane-wave ultra-soft pseudopotential method [18] based on DFT within the generalized-gradient approximation (GGA) [19,20] is used. All calculations are carried in reciprocal space and the atomic pseudopotentials, described by ultra-soft pseudopotential [21,22], are generated from the following electronic configurations as: Ga: 3d 10 4s 2 4p 1 , Al: 3s 2 3p 1 , As: 4s 2 4p 3 , N: 2s 2 2p 3 , Cs: 5s 2 5p 6 6s 1 and H: 1s.…”

Section: Calculation Methods and Modelsmentioning

confidence: 99%