“…Meanwhile, the group-IV metal chalcogenide family (group-IV metal = Ge, Sn/chalcogen = S, Se, Te) has been actively reported as a wide bandgap 2D vdW material over the last few years. [25][26][27] In particular, the GeSe and GeSe 2 phases exhibited interesting material characteristics, [28][29][30][31] such as magnetism, [32] ferroelectricity, [33,34] thermoelectricity, [35] and nonlinear optics, [36] and could be potentially used in photonics and electronics applications, including in ovonic threshold switch devices. [37][38][39][40] According to the band structure calculation for the germanium selenide phases, Ge 4 Se 9 , which has not been reported to grow in 2D vdW form yet, remains an interesting material as it exhibits a small band offset with MoS 2 , which is the major channel material for 2D heterostructure devices.…”