2014
DOI: 10.1016/j.comptc.2013.10.017
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First principles study on the influence of electronic configuration of M on Cu3NM: M = Sc, Ti, V, Cr, Mn, Fe, Co, Ni

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Cited by 16 publications
(6 citation statements)
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“…Moreover, recent studies suggest that both covalent and ionic bonds connect Cu and N atoms in undoped Cu3N [30]. On the other hand, for M-doped Cu3N, the bond coordination has a covalent character as the interactions between the inserted M and Cu atoms dominate [42,92]. Undoped Cu3N tends to be insulating due to defect states created by metallic and non-metallic vacancies of Cu and N, respectively [93].…”
Section: Electronic Structure and Band Gapmentioning
confidence: 99%
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“…Moreover, recent studies suggest that both covalent and ionic bonds connect Cu and N atoms in undoped Cu3N [30]. On the other hand, for M-doped Cu3N, the bond coordination has a covalent character as the interactions between the inserted M and Cu atoms dominate [42,92]. Undoped Cu3N tends to be insulating due to defect states created by metallic and non-metallic vacancies of Cu and N, respectively [93].…”
Section: Electronic Structure and Band Gapmentioning
confidence: 99%
“…Moreover, recent studies suggest that both covalent and ionic bonds connect Cu and N atoms in undoped Cu 3 N [30]. On the other hand, for M-doped Cu 3 N, the bond coordination has a covalent character as the interactions between the inserted M and Cu atoms dominate [42,92].…”
Section: Electronic Structure and Band Gapmentioning
confidence: 99%
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“…Among the transition metal-rich nitride systems, copper nitride (Cu 3 N) has attained significant importance due to its special anti-ReO 3 crystal structure, which contains corner-shared Cu–N octahedra arranged in a cubic lattice . The unit cell of Cu 3 N has a void in the center, which can host many zerovalent transition metal ions such as Ni, Cr, Fe, and Co. The most attractive characteristic feature of Cu 3 N is a semiconductor with an indirect band gap energy ∼1.4 eV and its optical absorption coefficient value of ∼10 5 cm –1 , which is ideal for solar energy conversion. There are several approaches to increase the light absorption property of a semiconductor.…”
Section: Introductionmentioning
confidence: 99%